Polymorphous silicon nanowires synthesized by plasma-enhanced chemical vapor deposition
文献类型：会议论文
| 作者 | Zeng XB ; Liao XB ; Diao HW ; Hu ZH ; Xu YY ; Zhang SB ; Chen CY ; Chen WD ; Kong GL |
| 出版日期 | 2003 |
| 会议名称 | symposium on quantum confined semiconductor nanostructures held at the 2002 mrs fall meeting |
| 会议日期 | dec 02, 2001-dec 05, 2002 |
| 会议地点 | boston, ma |
| 关键词 | LASER-ABLATION SEMICONDUCTOR NANOWIRES GROWTH MECHANISM EVAPORATION DIAMETER WIRES |
| 页码 | 667-672 |
| 通讯作者 | zeng xb chinese acad sci inst semicond state key lab surface phys beijing 100083 peoples r china. |
| 中文摘要 | polymorphous si nanowires (sinws) have been successfully synthesized on si wafer by plasma enhanced chemical vapor deposition (pecvd) at 440degreesc,using silane as the si source and au as the catalyst. to grow the polymorphous sinws preannealing the si substrate with au film at 1100 degreesc is needed. the diameters of si nanowires range from 15 to 100 urn. the structure morphology and chemical composition of the sinws have been characterized by high resolution x-ray diffraction, scanning electron microscopy, transmission electron microscopy, as well as energy dispersive x-ray spectroscopy. a few interesting nanowires with au nanoclusters uniformly distributed in the body of the wire were also produced by this technique. |
| 英文摘要 | polymorphous si nanowires (sinws) have been successfully synthesized on si wafer by plasma enhanced chemical vapor deposition (pecvd) at 440degreesc,using silane as the si source and au as the catalyst. to grow the polymorphous sinws preannealing the si substrate with au film at 1100 degreesc is needed. the diameters of si nanowires range from 15 to 100 urn. the structure morphology and chemical composition of the sinws have been characterized by high resolution x-ray diffraction, scanning electron microscopy, transmission electron microscopy, as well as energy dispersive x-ray spectroscopy. a few interesting nanowires with au nanoclusters uniformly distributed in the body of the wire were also produced by this technique.; 于2010-10-29批量导入; made available in dspace on 2010-10-29t06:36:27z (gmt). no. of bitstreams: 1 2800.pdf: 700258 bytes, checksum: d606f43829ab4398d03394524de211aa (md5) previous issue date: 2003; mat res soc.; evident technol inc.; ibm tj watson res ctr.; los alamos natl lab.; motorola inc.; texas a&m univ.; chinese acad sci, inst semicond, state key lab surface phys, beijing 100083, peoples r china |
| 收录类别 | CPCI-S |
| 会议主办者 | mat res soc.; evident technol inc.; ibm tj watson res ctr.; los alamos natl lab.; motorola inc.; texas a&m univ. |
| 会议录 | quantum confined semiconductor nanostructures, 737
 |
| 会议录出版者 | materials research society ; 506 keystone drive, warrendale, pa 15088-7563 usa |
| 学科主题 | 半导体材料 |
| 会议录出版地 | 506 keystone drive, warrendale, pa 15088-7563 usa |
| 语种 | 英语 |
| ISSN号 | 0272-9172 |
| ISBN号 | 1-55899-674-5 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/13621]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Zeng XB,Liao XB,Diao HW,et al. Polymorphous silicon nanowires synthesized by plasma-enhanced chemical vapor deposition[C]. 见:symposium on quantum confined semiconductor nanostructures held at the 2002 mrs fall meeting. boston, ma. dec 02, 2001-dec 05, 2002. |
入库方式： OAI收割
来源：半导体研究所
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