Microstructure of the silicon film prepared near the phase transition regime from amorphous to nanocrystalline
文献类型：会议论文
| 作者 | Zhang SB ; Liao XB ; Xu YY ; Hu ZH ; Zeng XB ; Diao HW ; Luo MC ; Kong G |
| 出版日期 | 2003 |
| 会议名称 | symposium on quantum confined semiconductor nanostructures held at the 2002 mrs fall meeting |
| 会议日期 | dec 02, 2001-dec 05, 2002 |
| 会议地点 | boston, ma |
| 关键词 | POLYMORPHOUS SILICON LIGHT-SCATTERING THIN-FILMS SI MICROCRYSTALLINITY ABSORPTION STATES |
| 页码 | 679-684 |
| 通讯作者 | zhang sb chinese acad sci inst semicond ctr condensed state phys state key lab surface phys beijing 100083 peoples r china. |
| 中文摘要 | a kind of hydrogenated diphasic silicon films has been prepared by a new regime of plasma enhanced chemical vapor deposition (pecvd) near the phase transition regime from amorphous to nanocrystalline. the microstructural properties of the films have been investigated by the micro-raman and fourier transformed infrared (ft-ir) spectra and atom force microscopy (afm). the obtained raman spectra show not only the existence of nanoscaled crystallites, but also a notable improvement in the medium-range order of the diphasic films. for the ft-ir spectra of this kind of films, it notes that there is a blueshift in the si-h stretching mode and a redshift in the si-h wagging mode in respect to that of typical amorphous silicon film. we discussed the reasons responsible for these phenomena by means of the phase transition, which lead to the formation of a diatomic hydrogen complex, h-2* and their congeries. |
| 英文摘要 | a kind of hydrogenated diphasic silicon films has been prepared by a new regime of plasma enhanced chemical vapor deposition (pecvd) near the phase transition regime from amorphous to nanocrystalline. the microstructural properties of the films have been investigated by the micro-raman and fourier transformed infrared (ft-ir) spectra and atom force microscopy (afm). the obtained raman spectra show not only the existence of nanoscaled crystallites, but also a notable improvement in the medium-range order of the diphasic films. for the ft-ir spectra of this kind of films, it notes that there is a blueshift in the si-h stretching mode and a redshift in the si-h wagging mode in respect to that of typical amorphous silicon film. we discussed the reasons responsible for these phenomena by means of the phase transition, which lead to the formation of a diatomic hydrogen complex, h-2* and their congeries.; 于2010-10-29批量导入; made available in dspace on 2010-10-29t06:36:27z (gmt). no. of bitstreams: 1 2801.pdf: 95976 bytes, checksum: fef181dc99bed5361f4cad17a75265c3 (md5) previous issue date: 2003; mat res soc.; evident technol inc.; ibm tj watson res ctr.; los alamos natl lab.; motorola inc.; texas a&m univ.; chinese acad sci, inst semicond, ctr condensed state phys, state key lab surface phys, beijing 100083, peoples r china |
| 收录类别 | CPCI-S |
| 会议主办者 | mat res soc.; evident technol inc.; ibm tj watson res ctr.; los alamos natl lab.; motorola inc.; texas a&m univ. |
| 会议录 | quantum confined semiconductor nanostructures, 737
 |
| 会议录出版者 | materials research society ; 506 keystone drive, warrendale, pa 15088-7563 usa |
| 学科主题 | 半导体材料 |
| 会议录出版地 | 506 keystone drive, warrendale, pa 15088-7563 usa |
| 语种 | 英语 |
| ISSN号 | 0272-9172 |
| ISBN号 | 1-55899-674-5 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/13623]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Zhang SB,Liao XB,Xu YY,et al. Microstructure of the silicon film prepared near the phase transition regime from amorphous to nanocrystalline[C]. 见:symposium on quantum confined semiconductor nanostructures held at the 2002 mrs fall meeting. boston, ma. dec 02, 2001-dec 05, 2002. |
入库方式： OAI收割
来源：半导体研究所
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