High-mobility Ga-polarity GaN achieved by NH3-MBE
文献类型：会议论文
| 作者 | Wang JX ; Wang XL ; Sun DZ ; Li JM ; Zeng YP ; Hu GX ; Liu HX ; Lin LY |
| 出版日期 | 2003 |
| 会议名称 | symposium on gan and related alloys held at the 2002 mrs fall meeting |
| 会议日期 | dec 02-06, 2002 |
| 会议地点 | boston, ma |
| 关键词 | MOLECULAR-BEAM EPITAXY ION-SCATTERING SPECTROSCOPY LATTICE POLARITY SINGLE-CRYSTALS FILMS POLARIZATION GAN(0001) SURFACES GROWTH DIODES |
| 页码 | 85-90 |
| 通讯作者 | wang jx chinese acad sci inst semicond mat ctr pob 912 beijing 100083 peoples r china. |
| 中文摘要 | gan epilayers were grown on (0001) sapphire substrates by nh3-mbe and rf-mbe (radio frequency plasma). the polarities of the epilayers were investigated by in-situ rheed, chemical solution etching and afm surface examination. by using a rf-mbe grown gan layer as template to deposit gan epilayer by nh3-mbe method, we found that not only ga-polarity gan films were repeatedly obtained, but also the electron mobility of these ga-polarity films was significantly improved with a best value of 290 cm(2)/v.s at room temperature. experimental results show it is an easy and stable way for growth of high quality ga-polarity gan films. |
| 英文摘要 | gan epilayers were grown on (0001) sapphire substrates by nh3-mbe and rf-mbe (radio frequency plasma). the polarities of the epilayers were investigated by in-situ rheed, chemical solution etching and afm surface examination. by using a rf-mbe grown gan layer as template to deposit gan epilayer by nh3-mbe method, we found that not only ga-polarity gan films were repeatedly obtained, but also the electron mobility of these ga-polarity films was significantly improved with a best value of 290 cm(2)/v.s at room temperature. experimental results show it is an easy and stable way for growth of high quality ga-polarity gan films.; 于2010-10-29批量导入; made available in dspace on 2010-10-29t06:36:28z (gmt). no. of bitstreams: 1 2802.pdf: 122210 bytes, checksum: b5a1b00c4e601234af288be4dc2a534b (md5) previous issue date: 2003; mat res soc.; chinese acad sci, inst semicond, mat ctr, beijing 100083, peoples r china |
| 收录类别 | CPCI-S |
| 会议主办者 | mat res soc. |
| 会议录 | gan and related alloys-2002, 743
 |
| 会议录出版者 | materials research society ; 506 keystone drive, warrendale, pa 15088-7563 usa |
| 学科主题 | 半导体材料 |
| 会议录出版地 | 506 keystone drive, warrendale, pa 15088-7563 usa |
| 语种 | 英语 |
| ISSN号 | 0272-9172 |
| ISBN号 | 1-55899-680-x |
| 源URL | [http://ir.semi.ac.cn/handle/172111/13625]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Wang JX,Wang XL,Sun DZ,et al. High-mobility Ga-polarity GaN achieved by NH3-MBE[C]. 见:symposium on gan and related alloys held at the 2002 mrs fall meeting. boston, ma. dec 02-06, 2002. |
入库方式： OAI收割
来源：半导体研究所
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