Optical characterization of the Ge/Si (001) islands in multilayer structure
文献类型：会议论文
| 作者 | Huang CJ ; Zuo YH ; Li C ; Li DZ ; Cheng BW ; Luo LP ; Yu JZ ; Wang QM |
| 出版日期 | 2001 |
| 会议名称 | asia-pacific optical and wireless communications conference (apoc 2001) |
| 会议日期 | nov 12-15, 2001 |
| 会议地点 | beijing, peoples r china |
| 关键词 | Ge/Si islands quantum dot band alignment PL SI/SI1-XGEX QUANTUM-WELLS STRANSKI-KRASTANOV GROWTH II BAND ALIGNMENT GE ISLANDS TEMPERATURE-DEPENDENCE PHOTOLUMINESCENCE LAYERS LUMINESCENCE ORGANIZATION MECHANISM |
| 页码 | 202-208 |
| 通讯作者 | huang cj chinese acad sci inst semicond state key lab integrated optoelect beijing 100083 peoples r china. |
| 中文摘要 | we show that the observed temperature dependence of the photoluminescence (pl) features can be consistently explained in terms of thermally activated carrier transfer processes in a multilayer structure of the self-organized ge/si(001) islands. the type ii (electron confinement in si) behavior of the ge/si islands is verified. with elevated temperature, the thermally activated electrons and holes enter the ge islands from the si and from the wetting layer (wl), respectively. an involvement of the type i (spatially direct) into type ii (spatially indirect) recombination transition takes place at a high temperature. |
| 英文摘要 | we show that the observed temperature dependence of the photoluminescence (pl) features can be consistently explained in terms of thermally activated carrier transfer processes in a multilayer structure of the self-organized ge/si(001) islands. the type ii (electron confinement in si) behavior of the ge/si islands is verified. with elevated temperature, the thermally activated electrons and holes enter the ge islands from the si and from the wetting layer (wl), respectively. an involvement of the type i (spatially direct) into type ii (spatially indirect) recombination transition takes place at a high temperature.; 于2010-10-29批量导入; made available in dspace on 2010-10-29t06:36:35z (gmt). no. of bitstreams: 1 2836.pdf: 228328 bytes, checksum: c5b7ded92756c28a2cf27a4f9e399e72 (md5) previous issue date: 2001; spie.; china opt & optoelectr manufacturers assoc.; minist informat ind.; china inst commun.; nel ntt electr corp.; credit suisse first boston technol grp.; china telecom.; huawei technologies.; zte corp.; sany optilayer co ltd.; dateng telecom.; photon technol.; o net commun ltd.; china minist sci & technol.; alcatel.; corning.; australia opt soc.; beijing univ posts & telecommun.; korea assoc photon ind dev.; optoelectr ind dev assoc.; optoelectr ind & technol dev assoc.; opt soc india.; opt soc japan.; opt soc korea.; photon ind dev assoc.; photon assoc.; spie asia pacific chapters.; spie tech grp opt networks.; tsinghua univ.; chinese acad sci, inst semicond, state key lab integrated optoelect, beijing 100083, peoples r china |
| 收录类别 | CPCI-S |
| 会议主办者 | spie.; china opt & optoelectr manufacturers assoc.; minist informat ind.; china inst commun.; nel ntt electr corp.; credit suisse first boston technol grp.; china telecom.; huawei technologies.; zte corp.; sany optilayer co ltd.; dateng telecom.; photon technol.; o net commun ltd.; china minist sci & technol.; alcatel.; corning.; australia opt soc.; beijing univ posts & telecommun.; korea assoc photon ind dev.; optoelectr ind dev assoc.; optoelectr ind & technol dev assoc.; opt soc india.; opt soc japan.; opt soc korea.; photon ind dev assoc.; photon assoc.; spie asia pacific chapters.; spie tech grp opt networks.; tsinghua univ. |
| 会议录 | apoc 2001: asia-pacific optical and wireless communications: optoelectronics, materials, and devices for communications, 4580
 |
| 会议录出版者 | spie-int soc optical engineering ; 1000 20th st, po box 10, bellingham, wa 98227-0010 usa |
| 学科主题 | 光电子学 |
| 会议录出版地 | 1000 20th st, po box 10, bellingham, wa 98227-0010 usa |
| 语种 | 英语 |
| ISSN号 | 0277-786x |
| ISBN号 | 0-8194-4310-7 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/13649]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Huang CJ,Zuo YH,Li C,et al. Optical characterization of the Ge/Si (001) islands in multilayer structure[C]. 见:asia-pacific optical and wireless communications conference (apoc 2001). beijing, peoples r china. nov 12-15, 2001. |
入库方式： OAI收割
来源：半导体研究所
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