Observation of deep electron states in n-type Al-doped ZnS1-xTex grown by molecular beam epitaxy
文献类型：会议论文
| 作者 | Lu LW ; Ge WK ; Sou IK ; Wang J |
| 出版日期 | 2001 |
| 会议名称 | 6th international conference on solid-state and integrated-circuit technology |
| 会议日期 | oct 22-25, 2001 |
| 会议地点 | shanghai, peoples r china |
| 关键词 | ZNSTE |
| 页码 | 1446-1448 |
| 通讯作者 | lu lw chinese acad sci inst semicond lab semicond mat sci pob912 beijing 100083 peoples r china. |
| 中文摘要 | deep level transient spectroscopy (dlts) technique was used to investigate deep electron states in n-type al-doped zns1-xtex epilayers grown by molecular fiction epitaxy (mbe), deep level transient fourier spectroscopy (dltfs) spectra of the al-doped zns1-xtex (x = 0. 0.017, 0.04 and 0.046. respectively) epilayers reveal that at doping leads to the formation of two electron traps at 0.21 and 0.39 ev below the conduction hand. 1)dltfs results suggest that in addition to the rules of te as a component of [lie alloy as well as isoelectronic centers, te is also involved in the formation of all electron trip, whose energy level relative to the conduction hand decreases a, te composition increases. |
| 英文摘要 | deep level transient spectroscopy (dlts) technique was used to investigate deep electron states in n-type al-doped zns1-xtex epilayers grown by molecular fiction epitaxy (mbe), deep level transient fourier spectroscopy (dltfs) spectra of the al-doped zns1-xtex (x = 0. 0.017, 0.04 and 0.046. respectively) epilayers reveal that at doping leads to the formation of two electron traps at 0.21 and 0.39 ev below the conduction hand. 1)dltfs results suggest that in addition to the rules of te as a component of [lie alloy as well as isoelectronic centers, te is also involved in the formation of all electron trip, whose energy level relative to the conduction hand decreases a, te composition increases.; 于2010-10-29批量导入; made available in dspace on 2010-10-29t06:36:40z (gmt). no. of bitstreams: 1 2853.pdf: 159299 bytes, checksum: 9d3d45095eabc6443cedd43845322b0c (md5) previous issue date: 2001; chinese inst electr.; ieee beijing sect.; ieee electron devices soc.; ieee eds beijing chapter.; ieee eds shanghai chapter.; ieee solid state circuits soc.; japan soc appl phys.; iee, electr div.; iee korea.; assoc asia pacific phys soc.; chinese acad sci, inst semicond, lab semicond mat sci, beijing 100083, peoples r china |
| 收录类别 | CPCI-S |
| 会议主办者 | chinese inst electr.; ieee beijing sect.; ieee electron devices soc.; ieee eds beijing chapter.; ieee eds shanghai chapter.; ieee solid state circuits soc.; japan soc appl phys.; iee, electr div.; iee korea.; assoc asia pacific phys soc. |
| 会议录 | solid-state and integrated-circuit technology, vols 1 and 2, proceedings
 |
| 会议录出版者 | ieee ; 345 e 47th st, new york, ny 10017 usa |
| 学科主题 | 半导体材料 |
| 会议录出版地 | 345 e 47th st, new york, ny 10017 usa |
| 语种 | 英语 |
| ISBN号 | 0-7803-6520-8 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/13683]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Lu LW,Ge WK,Sou IK,et al. Observation of deep electron states in n-type Al-doped ZnS1-xTex grown by molecular beam epitaxy[C]. 见:6th international conference on solid-state and integrated-circuit technology. shanghai, peoples r china. oct 22-25, 2001. |
入库方式： OAI收割
来源：半导体研究所
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