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Raman scattering and infrared absorption of silicon nanocrystals in silicon oxide matrix
文献类型：会议论文
| 作者 | Ma ZX ; Liao XB ; Zheng WM ; Yu J ; Chu JH |
| 出版日期 | 2000 |
| 会议名称 | 4th international conference on thin film physics and applications |
| 会议日期 | may 08-11, 2000 |
| 会议地点 | shanghai, peoples r china |
| 关键词 | nanocrystalline silicon Raman scattering infrared absorption phonon confinement MICROCRYSTALLINE SILICON POLYCRYSTALLINE SILICON FILMS |
| 页码 | 258-261 |
| 通讯作者 | ma zx chinese acad sci inst semicond ctr fis mat condensada state key lab surface phys pob 912 beijing 100083 peoples r china. |
| 中文摘要 | structural dependence on annealing of a-siox:h was studied by using infrared absorption and raman scattering. the appearance of raman peaks in the range of 513-519cm(-1) after 1170 degreesc annealing was interpreted as the formation nanocrystalline silicon with the sizes from 3-10nm. the raman spectra also show the existence of amorphous-like silicon phase, which is associated with si-si bond re-construction at boundaries of silicon nanocrystallites. the presence of the shoulder at 980cm(-1) of si-o-si stretching vibration at 1085cm(-1) in infrared spectra imply that except that sio2 phase, there is silicon sub-oxide phase in the films annealed at 1170 degreesc. this sub-oxide phase is located at the interface between si crystallites and sio2, and thus support the shell model for the mixed structures of si grains and sio2 matrix. |
| 英文摘要 | structural dependence on annealing of a-siox:h was studied by using infrared absorption and raman scattering. the appearance of raman peaks in the range of 513-519cm(-1) after 1170 degreesc annealing was interpreted as the formation nanocrystalline silicon with the sizes from 3-10nm. the raman spectra also show the existence of amorphous-like silicon phase, which is associated with si-si bond re-construction at boundaries of silicon nanocrystallites. the presence of the shoulder at 980cm(-1) of si-o-si stretching vibration at 1085cm(-1) in infrared spectra imply that except that sio2 phase, there is silicon sub-oxide phase in the films annealed at 1170 degreesc. this sub-oxide phase is located at the interface between si crystallites and sio2, and thus support the shell model for the mixed structures of si grains and sio2 matrix.; 于2010-10-29批量导入; made available in dspace on 2010-10-29t06:36:51z (gmt). no. of bitstreams: 1 2884.pdf: 298237 bytes, checksum: 8238f74f5b7395903438632d60ed38d3 (md5) previous issue date: 2000; chinese phys soc.; shanghai phys soc.; natl lab infrared phys.; acad sinica, shanghai inst tech phys.; natl nat sci fdn china.; spie.; abdus salam int ctr theoret phys.; satis vacuum ind vertriebs ag.; chinese acad sci, inst semicond, ctr fis mat condensada, state key lab surface phys, beijing 100083, peoples r china |
| 收录类别 | CPCI-S |
| 会议主办者 | chinese phys soc.; shanghai phys soc.; natl lab infrared phys.; acad sinica, shanghai inst tech phys.; natl nat sci fdn china.; spie.; abdus salam int ctr theoret phys.; satis vacuum ind vertriebs ag. |
| 会议录 | fourth international conference on thin film physics and applications, 4086
 |
| 会议录出版者 | spie-int soc optical engineering ; 1000 20th st, po box 10, bellingham, wa 98227-0010 usa |
| 学科主题 | 半导体材料 |
| 会议录出版地 | 1000 20th st, po box 10, bellingham, wa 98227-0010 usa |
| 语种 | 英语 |
| ISSN号 | 0277-786x |
| ISBN号 | 0-8194-3729-8 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/13713]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Ma ZX,Liao XB,Zheng WM,et al. Raman scattering and infrared absorption of silicon nanocrystals in silicon oxide matrix[C]. 见:4th international conference on thin film physics and applications. shanghai, peoples r china. may 08-11, 2000. |
入库方式： OAI收割
来源：半导体研究所
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