中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Investigation on integrated high speed DFB light source and narrow bandwidth RCE photodetector for WDM fiber communication network application

文献类型:会议论文

作者Wang QM ; Li C ; Pan Z ; Luo Y
出版日期2000
会议名称conference on advanced photonic sensors
会议日期nov 08-10, 2000
会议地点beijing, peoples r china
关键词gain-coupling DFB laser EA modulator RCE photodetector monolithic integration MU-M LASER
页码1-5
通讯作者wang qm chinese acad sci inst semicond state key join lab integrates optoelect beijing 100083 peoples r china.
中文摘要electroabsorption (ea) modulator integrated with partially gain coupling distributed feedback (dfb) lasers have been fabricated and shown high single mode yield and wavelength stability. the small signal bandwidth is about 7.5 ghz. strained si1-chigechi/si multiple quantum well (mqw) resonant-cavity enhanced (rce) photodetectors with sio2/si distributed bragg reflector (dbr) as the mirrors have been fabricated and shown a clear narrow bandwidth response. the external quantum efficiency at 1.3 mum is measured to be about 3.5% under reverse bias of 16 v. a novel gainnas/gaas mqw rce p-i-n photodetector with high reflectance gaas/alas dbr mirrors has also been demonstrated and shown the selectively detecting function with the fwhm of peak response of 12 nm.
收录类别CPCI-S
会议主办者china opt & optoelectr manufacturers assoc.; chinese phys soc.; spie.
会议录advanced photonic sensors: technology and applications, 4220
会议录出版者spie-int soc optical engineering ; 1000 20th st, po box 10, bellingham, wa 98227-0010 usa
学科主题光电子学
会议录出版地1000 20th st, po box 10, bellingham, wa 98227-0010 usa
语种英语
ISSN号0277-786x
ISBN号0-8194-3891-x
源URL[http://ir.semi.ac.cn/handle/172111/13715]  
专题半导体研究所_中国科学院半导体研究所(2009年前)
推荐引用方式
GB/T 7714
Wang QM,Li C,Pan Z,et al. Investigation on integrated high speed DFB light source and narrow bandwidth RCE photodetector for WDM fiber communication network application[C]. 见:conference on advanced photonic sensors. beijing, peoples r china. nov 08-10, 2000.

入库方式: OAI收割

来源:半导体研究所

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