In situ annealing during the growth of relaxed SiGe
文献类型：会议论文
| 作者 | Li DZ ; Huang CJ ; Cheng BW ; Wang HJ ; Yu Z ; Zhang CH ; Yu JZ ; Wang QM |
| 出版日期 | 2000 |
| 会议名称 | conference on optical and infrared thin films |
| 会议日期 | 36739 |
| 会议地点 | san diego, ca |
| 关键词 | Ultrahigh Vacuum Chemical Vapor Deposition SiGe Refractive High Energy Electron Diffraction tansmission electron microscopy Double Crystal X-Ray Diffraction MOBILITY 2-DIMENSIONAL ELECTRON CRITICAL THICKNESS STRAINED LAYERS GE RELAXATION EPILAYERS SI1-XGEX GESI/SI GASES |
| 页码 | 93-99 |
| 通讯作者 | li dz chinese acad sci inst semicond state key lab integrated optoelect beijing 100083 peoples r china. |
| 中文摘要 | in this paper, a graded si1-xgex buffer and thereafter the si0.8ge0.2 uniform layer were grown at a little lower temperature to keep the surface smooth, which will provide the gliding dislocations a wider channel and less low energy nucleation sites on the surface. therefore, the dislocation density may be reduced. however, the motion of the existing threading dislocations cannot retain equilibrium at lower temperature, strain will accumulate and be in favor of the nucleation of dislocation. in situ annealing was used to reduce the residual strain in the sample during the low-temperature growth of sige. a fully relaxed si0.8ge0.2 layer was obtained with the surface dislocation density of 3x10(5)cm(-2). |
| 英文摘要 | in this paper, a graded si1-xgex buffer and thereafter the si0.8ge0.2 uniform layer were grown at a little lower temperature to keep the surface smooth, which will provide the gliding dislocations a wider channel and less low energy nucleation sites on the surface. therefore, the dislocation density may be reduced. however, the motion of the existing threading dislocations cannot retain equilibrium at lower temperature, strain will accumulate and be in favor of the nucleation of dislocation. in situ annealing was used to reduce the residual strain in the sample during the low-temperature growth of sige. a fully relaxed si0.8ge0.2 layer was obtained with the surface dislocation density of 3x10(5)cm(-2).; 于2010-10-29批量导入; made available in dspace on 2010-10-29t06:36:52z (gmt). no. of bitstreams: 1 2887.pdf: 1576967 bytes, checksum: 1a44cf49ae2981b136c7190d8c4d7411 (md5) previous issue date: 2000; spie.; chinese acad sci, inst semicond, state key lab integrated optoelect, beijing 100083, peoples r china |
| 收录类别 | CPCI-S |
| 会议主办者 | spie. |
| 会议录 | optical and infrared thin films, 4094
 |
| 会议录出版者 | spie-int soc optical engineering ; 1000 20th st, po box 10, bellingham, wa 98227-0010 usa |
| 学科主题 | 光电子学 |
| 会议录出版地 | 1000 20th st, po box 10, bellingham, wa 98227-0010 usa |
| 语种 | 英语 |
| ISSN号 | 0277-786x |
| ISBN号 | 0-8194-3739-5 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/13719]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Li DZ,Huang CJ,Cheng BW,et al. In situ annealing during the growth of relaxed SiGe[C]. 见:conference on optical and infrared thin films. san diego, ca. 36739. |
入库方式： OAI收割
来源：半导体研究所
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