A model of dislocations at the interface of the bonded wafers
文献类型：会议论文
| 作者 | Han WH ; Wang LC
|
| 出版日期 | 2000 |
| 会议名称 | conference on optical interconnects for telecommunication and data communications |
| 会议日期 | nov 08-10, 2000 |
| 会议地点 | beijing, peoples r china |
| 关键词 | wafer bonding heteroepitaxy lattice mismatch edge-like dislocations thermal stress 60 degrees dislocation lines GAAS |
| 页码 | 116-119 |
| 通讯作者 | han wh chinese acad sci inst semicond state key lab integrated optoelect pob 912 beijing 100083 peoples r china. |
| 中文摘要 | wafer bonding is regardless of lattice mismatch in the integration of dissimilar semiconductor materials. this technology differs from the heteroepitaxy mainly in the mechanism of generating dislocations at the interface. a model of dislocations at the bonded interface is proposed in this paper. edge-like dislocations, which most efficiently relax the strain, are predominant at the bonded interface. but the thermal stress associated with large thermal expansion misfit may drive dislocations away from the bonded interface upon cooling. |
| 英文摘要 | wafer bonding is regardless of lattice mismatch in the integration of dissimilar semiconductor materials. this technology differs from the heteroepitaxy mainly in the mechanism of generating dislocations at the interface. a model of dislocations at the bonded interface is proposed in this paper. edge-like dislocations, which most efficiently relax the strain, are predominant at the bonded interface. but the thermal stress associated with large thermal expansion misfit may drive dislocations away from the bonded interface upon cooling.; 于2010-10-29批量导入; made available in dspace on 2010-10-29t06:36:52z (gmt). no. of bitstreams: 1 2890.pdf: 77830 bytes, checksum: 367fb9c652706f2a4806a3c884108d78 (md5) previous issue date: 2000; china opt & optoelectr manufacturers assoc.; chinese phys soc.; spie.; chinese acad sci, inst semicond, state key lab integrated optoelect, beijing 100083, peoples r china |
| 收录类别 | CPCI-S |
| 会议主办者 | china opt & optoelectr manufacturers assoc.; chinese phys soc.; spie. |
| 会议录 | optical interconnects for telecommunication and data communications, 4225
 |
| 会议录出版者 | spie-int soc optical engineering ; 1000 20th st, po box 10, bellingham, wa 98227-0010 usa |
| 学科主题 | 光电子学 |
| 会议录出版地 | 1000 20th st, po box 10, bellingham, wa 98227-0010 usa |
| 语种 | 英语 |
| ISSN号 | 0277-786x |
| ISBN号 | 0-8194-3896-0 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/13723]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Han WH,Wang LC. A model of dislocations at the interface of the bonded wafers[C]. 见:conference on optical interconnects for telecommunication and data communications. beijing, peoples r china. nov 08-10, 2000. |
入库方式： OAI收割
来源：半导体研究所
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