Modulation magnesium-doping in AlGaN/GaN superlattices
文献类型：会议论文
| 作者 | Liu XL ; Yuan HR ; Lu DC ; Wang XH |
| 出版日期 | 2000 |
| 会议名称 | international workshop on nitride semiconductors (iwn 2000) |
| 会议日期 | sep 24-27, 2000 |
| 会议地点 | nagoya, japan |
| 关键词 | Mg-doped AlGaN/GaN superlattices resistivity hole concentration POLARIZATION |
| 页码 | 732-735 |
| 通讯作者 | liu xl chinese acad sci inst semicond lab semicond mat sci pob 912 beijing 100083 peoples r china. |
| 中文摘要 | low resistivity of p-type mg-doped algan/gan superlattices (sls) is demonstrated. the resistivity of the sls is less than 0.6 omega .cm. and the measured hole concentration is higher than 1x10(18)cm(-3). the resistivity of sls is much lower, and the hole concentration of sls is much higher, than that of bulk gan and algan, the electrical properties of the sls are less sensitive than the conventional bulk lavers. |
| 英文摘要 | low resistivity of p-type mg-doped algan/gan superlattices (sls) is demonstrated. the resistivity of the sls is less than 0.6 omega .cm. and the measured hole concentration is higher than 1x10(18)cm(-3). the resistivity of sls is much lower, and the hole concentration of sls is much higher, than that of bulk gan and algan, the electrical properties of the sls are less sensitive than the conventional bulk lavers.; 于2010-10-29批量导入; made available in dspace on 2010-10-29t06:36:55z (gmt). no. of bitstreams: 1 2900.pdf: 283651 bytes, checksum: 1d41b75aaaf09b966fb2b08b7e0a1ad3 (md5) previous issue date: 2000; japan soc appl phys, solid state phys & applicat div.; japan soc promot sci, comm short wavelength optoelectr devices, 162.; japan soc promot sci, comm convers light & elect, 125.; chinese acad sci, inst semicond, lab semicond mat sci, beijing 100083, peoples r china |
| 收录类别 | CPCI-S |
| 会议主办者 | japan soc appl phys, solid state phys & applicat div.; japan soc promot sci, comm short wavelength optoelectr devices, 162.; japan soc promot sci, comm convers light & elect, 125. |
| 会议录 | proceedings of the international workshop on nitride semiconductors, 1
 |
| 会议录出版者 | inst pure applied physics ; daini toyokaiji bldg 24-8 shinbashi 4 chome, tokyo, 105-0004, japan |
| 学科主题 | 半导体物理 |
| 会议录出版地 | daini toyokaiji bldg 24-8 shinbashi 4 chome, tokyo, 105-0004, japan |
| 语种 | 英语 |
| ISBN号 | 4-900526-13-4 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/13743]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Liu XL,Yuan HR,Lu DC,et al. Modulation magnesium-doping in AlGaN/GaN superlattices[C]. 见:international workshop on nitride semiconductors (iwn 2000). nagoya, japan. sep 24-27, 2000. |
入库方式： OAI收割
来源：半导体研究所
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