Photoluminescence characteristics of GaAs/AlGaAs quantum dot arrays fabricated by dry and dry-wet etching
文献类型：会议论文
| 作者 | Liu J
|
| 出版日期 | 1999 |
| 会议名称 | spie conference on photonics technology into the 21st century - semiconductors, microstructures, and nanostructures |
| 会议日期 | dec 01-03, 1999 |
| 会议地点 | singapore, singapore |
| 关键词 | GaAs/AlGaAs quantum dot array etching method photoluminescence WIRES |
| 页码 | 147-152 |
| 通讯作者 | wang xh chinese acad sci inst semicond natl lab superlattices & microstruct beijing 100083 peoples r china. |
| 中文摘要 | gaas/algaas quantum dot arrays with different dot sizes made by different fabrication processes were studied in this work. in comparison with the reference quantum well, photoluminescence (pl) spectra from the samples at low temperature have demonstrated that pl peak positions shift to higher energy side due to quantization confinement effects and the blue-shift increases with decreasing dot size, pl linewidths are broadened and intensities are much reduced. it is also found that wet chemical etching after reactive ion etching can improve optical properties of the quantum dot arrays. |
| 英文摘要 | gaas/algaas quantum dot arrays with different dot sizes made by different fabrication processes were studied in this work. in comparison with the reference quantum well, photoluminescence (pl) spectra from the samples at low temperature have demonstrated that pl peak positions shift to higher energy side due to quantization confinement effects and the blue-shift increases with decreasing dot size, pl linewidths are broadened and intensities are much reduced. it is also found that wet chemical etching after reactive ion etching can improve optical properties of the quantum dot arrays.; 于2010-10-29批量导入; made available in dspace on 2010-10-29t06:36:58z (gmt). no. of bitstreams: 1 2928.pdf: 282471 bytes, checksum: 7292481435c9426e7432665bc956da01 (md5) previous issue date: 1999; spie.; nanyang technol univ.; spie, singapore chapter.; inst phys.; usaf, asian off aerosp res & dev.; usa, res off far e.; chinese acad sci, inst semicond, natl lab superlattices & microstruct, beijing 100083, peoples r china |
| 收录类别 | CPCI-S |
| 会议主办者 | spie.; nanyang technol univ.; spie, singapore chapter.; inst phys.; usaf, asian off aerosp res & dev.; usa, res off far e. |
| 会议录 | photonics technology into the 21st century: semiconductors, microstructures, and nanostructures, 3899
 |
| 会议录出版者 | spie-int soc optical engineering ; 1000 20th st, po box 10, bellingham, wa 98227-0010 usa |
| 学科主题 | 光电子学 |
| 会议录出版地 | 1000 20th st, po box 10, bellingham, wa 98227-0010 usa |
| 语种 | 英语 |
| ISSN号 | 0277-786x |
| ISBN号 | 0-8194-3501-5 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/13751]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Liu J. Photoluminescence characteristics of GaAs/AlGaAs quantum dot arrays fabricated by dry and dry-wet etching[C]. 见:spie conference on photonics technology into the 21st century - semiconductors, microstructures, and nanostructures. singapore, singapore. dec 01-03, 1999. |
入库方式： OAI收割
来源：半导体研究所
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