Normal-incident SiGe/Si MQWs photodetectors operating at 1.3 mu m
文献类型:会议论文
作者 | Cheng BW ; Li C ; Yang QQ ; Wang HJ ; Luo LP ; Yu JZ ; Wang QM |
出版日期 | 1999 |
会议名称 | spie conference on photonics technology into the 21st century - semiconductors, microstructures, and nanostructures |
会议日期 | dec 01-03, 1999 |
会议地点 | singapore, singapore |
关键词 | SiGe/Si MQWs photodetector 1.3 MU-M SI/SIO2 |
页码 | 326-329 |
通讯作者 | cheng bw chinese acad sci inst semicond state key lab integrated optoelect pob 912 beijing 100083 peoples r china. |
中文摘要 | a normal-incident sige/si multiple quantum wells (mqws) photodetector was reported. the structure and fabrication process of the photodetector were introduced. the photocurrent spectra measurement showed that the response spectra was expanded to 1.3 mu m wavelength. the quantum efficiency of the photodetector was 0.1% at 1.3 mu m and 20% at 0.95 mu m. |
英文摘要 | a normal-incident sige/si multiple quantum wells (mqws) photodetector was reported. the structure and fabrication process of the photodetector were introduced. the photocurrent spectra measurement showed that the response spectra was expanded to 1.3 mu m wavelength. the quantum efficiency of the photodetector was 0.1% at 1.3 mu m and 20% at 0.95 mu m.; 于2010-10-29批量导入; made available in dspace on 2010-10-29t06:36:59z (gmt). no. of bitstreams: 1 2932.pdf: 180829 bytes, checksum: 52b2b9289c1dd1932e506bbfddd0b16e (md5) previous issue date: 1999; spie.; nanyang technol univ.; spie, singapore chapter.; inst phys.; usaf, asian off aerosp res & dev.; usa, res off far e.; chinese acad sci, inst semicond, state key lab integrated optoelect, beijing 100083, peoples r china |
收录类别 | CPCI-S |
会议主办者 | spie.; nanyang technol univ.; spie, singapore chapter.; inst phys.; usaf, asian off aerosp res & dev.; usa, res off far e. |
会议录 | photonics technology into the 21st century: semiconductors, microstructures, and nanostructures, 3899
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会议录出版者 | spie-int soc optical engineering ; 1000 20th st, po box 10, bellingham, wa 98227-0010 usa |
学科主题 | 光电子学 |
会议录出版地 | 1000 20th st, po box 10, bellingham, wa 98227-0010 usa |
语种 | 英语 |
ISSN号 | 0277-786x |
ISBN号 | 0-8194-3501-5 |
源URL | [http://ir.semi.ac.cn/handle/172111/13759] ![]() |
专题 | 半导体研究所_中国科学院半导体研究所(2009年前) |
推荐引用方式 GB/T 7714 | Cheng BW,Li C,Yang QQ,et al. Normal-incident SiGe/Si MQWs photodetectors operating at 1.3 mu m[C]. 见:spie conference on photonics technology into the 21st century - semiconductors, microstructures, and nanostructures. singapore, singapore. dec 01-03, 1999. |
入库方式: OAI收割
来源:半导体研究所
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