Fabrication of silicon-on-reflector for Si-based resonant-cavity-enhanced photodetectors
文献类型：会议论文
| 作者 | Li C ; Yang QQ ; Ou HY ; Wang QM |
| 出版日期 | 2000 |
| 会议名称 | 50th electronic components & technology conference (ectc 01) |
| 会议日期 | may 21-24, 2000 |
| 会议地点 | las vegas, nv |
| 关键词 | MIRRORS |
| 页码 | 1486-1488 |
| 通讯作者 | li c chinese acad sci inst semicond state key lab integrated optoelect pob 912 beijing 100083 peoples r china. |
| 中文摘要 | a novel silicon-on-reflector substrate for si-based resonant-cavity-enhanced photodetectors has been fabricated by using si-based sol-gel and smart-cut techniques. the si/sio2 bragg reflector is controlled in situ by electron beam evaporation and the thickness can be adjusted to get high reflectivity. the reflectance spectra of the silicon-on-reflector substrate with five pairs of si/sio2 reflector have been measured and simulated by transfer matrix model. the reflectivity at operating wavelength is close to 100%. based on the silicon-on-reflector substrate, sige/si multiple quantum wells resonant-cavity-enhanced photodetectors for 1.3 mu m wavelength have been designed and simulated. ten-fold enhancement of the quantum efficiency of resonant-cavity-enhanced photodetectors compared with conventional photodetectors is predicted. |
| 英文摘要 | a novel silicon-on-reflector substrate for si-based resonant-cavity-enhanced photodetectors has been fabricated by using si-based sol-gel and smart-cut techniques. the si/sio2 bragg reflector is controlled in situ by electron beam evaporation and the thickness can be adjusted to get high reflectivity. the reflectance spectra of the silicon-on-reflector substrate with five pairs of si/sio2 reflector have been measured and simulated by transfer matrix model. the reflectivity at operating wavelength is close to 100%. based on the silicon-on-reflector substrate, sige/si multiple quantum wells resonant-cavity-enhanced photodetectors for 1.3 mu m wavelength have been designed and simulated. ten-fold enhancement of the quantum efficiency of resonant-cavity-enhanced photodetectors compared with conventional photodetectors is predicted.; 于2010-10-29批量导入; made available in dspace on 2010-10-29t06:37:00z (gmt). no. of bitstreams: 1 2936.pdf: 312607 bytes, checksum: bd4732a950ae84daf4ecc13fdc0c398d (md5) previous issue date: 2000; ieee.; ieee components, packaging & mfg technol soc.; electe indust alliance.; eca electr components, assemblies, & mat assoc.; chinese acad sci, inst semicond, state key lab integrated optoelect, beijing 100083, peoples r china |
| 收录类别 | CPCI-S |
| 会议主办者 | ieee.; ieee components, packaging & mfg technol soc.; electe indust alliance.; eca electr components, assemblies, & mat assoc. |
| 会议录 | 50th electronic components & technology conference - 2000 proceedings
 |
| 会议录出版者 | ieee ; 345 e 47th st, new york, ny 10017 usa |
| 学科主题 | 光电子学 |
| 会议录出版地 | 345 e 47th st, new york, ny 10017 usa |
| 语种 | 英语 |
| ISBN号 | 0-7803-5908-9 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/13767]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Li C,Yang QQ,Ou HY,et al. Fabrication of silicon-on-reflector for Si-based resonant-cavity-enhanced photodetectors[C]. 见:50th electronic components & technology conference (ectc 01). las vegas, nv. may 21-24, 2000. |
入库方式： OAI收割
来源：半导体研究所
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