High temperature annealing behaviors of luminescent SIOx : H films
文献类型：会议论文
| 作者 | Ma ZX ; Xiang XB ; Sheng SR ; Liao XB ; Shao CL ; Umeno M |
| 出版日期 | 1999 |
| 会议名称 | symposium e on luminescent materials at the 1999 mrs spring meeting |
| 会议日期 | apr 05-08, 1999 |
| 会议地点 | san francisco, ca |
| 关键词 | RAMAN-SPECTRA SILICON PHOTOLUMINESCENCE |
| 页码 | 101-106 |
| 通讯作者 | ma zx chinese acad sci inst semicond beijing 100083 peoples r china. |
| 中文摘要 | the effects of high temperature annealing on the microstructure and optical properties of luminescent siox:h films have been investigated. micro-raman scattering and ir absorption, in combination with atomic force microscopy (afm), provide evidence for the existence of both a-si clusters in the as-grown a-siox:h and si nanocrystals in the 1170 degrees c annealed films. the dependence of optical coefficients (alpha) on photon energy (h nu) near the absorption edge (e-g) is found to follow the square root law: (alpha h nu)(1/2) proportional to (e-g - h nu), indicating that nano-si embedded in sio2 is still an indirect material. a comparison of the deduced absorption edge with the pl spectra shows an obvious stokes shift, suggesting that phonons should be involved in the optical transition process. |
| 英文摘要 | the effects of high temperature annealing on the microstructure and optical properties of luminescent siox:h films have been investigated. micro-raman scattering and ir absorption, in combination with atomic force microscopy (afm), provide evidence for the existence of both a-si clusters in the as-grown a-siox:h and si nanocrystals in the 1170 degrees c annealed films. the dependence of optical coefficients (alpha) on photon energy (h nu) near the absorption edge (e-g) is found to follow the square root law: (alpha h nu)(1/2) proportional to (e-g - h nu), indicating that nano-si embedded in sio2 is still an indirect material. a comparison of the deduced absorption edge with the pl spectra shows an obvious stokes shift, suggesting that phonons should be involved in the optical transition process.; 于2010-10-29批量导入; made available in dspace on 2010-10-29t06:37:04z (gmt). no. of bitstreams: 0 previous issue date: 1999; mat res soc.; chinese acad sci, inst semicond, beijing 100083, peoples r china |
| 收录类别 | CPCI-S |
| 会议主办者 | mat res soc. |
| 会议录 | luminescent materials, 560
 |
| 会议录出版者 | materials research society ; 506 keystone drive, warrendale, pa 15088-7563 usa |
| 学科主题 | 半导体材料 |
| 会议录出版地 | 506 keystone drive, warrendale, pa 15088-7563 usa |
| 语种 | 英语 |
| ISSN号 | 0272-9172 |
| ISBN号 | 1-55899-467-x |
| 源URL | [http://ir.semi.ac.cn/handle/172111/13781]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Ma ZX,Xiang XB,Sheng SR,et al. High temperature annealing behaviors of luminescent SIOx : H films[C]. 见:symposium e on luminescent materials at the 1999 mrs spring meeting. san francisco, ca. apr 05-08, 1999. |
入库方式： OAI收割
来源：半导体研究所
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