Coupled AlxGa1-xAs-AlAs distributed Bragg reflectors for high brightness AlGaInP light emitting diodes
文献类型:会议论文
作者 | Wang GH ; Ma XY ; Zhang YF ; Peng HI ; Wang ST ; Li YZ ; Chen LH |
出版日期 | 1998 |
会议名称 | conference on display devices and systems ii |
会议日期 | sep 16-17, 1998 |
会议地点 | beijing, peoples r china |
关键词 | LED coupled distributed Bragg reflector MOCVD AlGaInP |
页码 | 89-92 |
通讯作者 | wang gh chinese acad sci inst semicond natl engn res ctr optoelect devices pob 912 beijing 100083 peoples r china. |
中文摘要 | a novel coupled distributed bragg reflector (dbr) with double thickness periods was theoretically analyzed based on the spontaneous radiation properties of high brightness algainp light emitting diodes(led). several important factors were considered including spontaneous radiation angle distribution, absorption and ftr of dbr. calculation results showed that the optimum optical thickness of single layer of the dbr deviates from 1/4 lambda. aigainp high brightness light emitting diodes both with al0.5ga0.5as/alas coupled dbr and with conventional dbr were fabricated by metalorganic chemical vapor deposition(mocvd). x-ray double crystal diffraction and reflection spectrum were employed to determine the thickness and reflectivity of the dbr. it was found that reflectivity of coupled dbr is less sensitive to incident angle than conventional dbr, higher external quantum efficiency of light emitting diodes with coupled dbr was obtained than that with conventional dbr. |
英文摘要 | a novel coupled distributed bragg reflector (dbr) with double thickness periods was theoretically analyzed based on the spontaneous radiation properties of high brightness algainp light emitting diodes(led). several important factors were considered including spontaneous radiation angle distribution, absorption and ftr of dbr. calculation results showed that the optimum optical thickness of single layer of the dbr deviates from 1/4 lambda. aigainp high brightness light emitting diodes both with al0.5ga0.5as/alas coupled dbr and with conventional dbr were fabricated by metalorganic chemical vapor deposition(mocvd). x-ray double crystal diffraction and reflection spectrum were employed to determine the thickness and reflectivity of the dbr. it was found that reflectivity of coupled dbr is less sensitive to incident angle than conventional dbr, higher external quantum efficiency of light emitting diodes with coupled dbr was obtained than that with conventional dbr.; 于2010-10-29批量导入; made available in dspace on 2010-10-29t06:37:04z (gmt). no. of bitstreams: 1 2970.pdf: 181769 bytes, checksum: 001ce22ca2ffce0628e443b321cb61af (md5) previous issue date: 1998; spie int soc opt engn.; cos chinese opt soc.; coema china opt & optoelectr mfg assoc.; chinese acad sci, inst semicond, natl engn res ctr optoelect devices, beijing 100083, peoples r china |
收录类别 | CPCI-S |
会议主办者 | spie int soc opt engn.; cos chinese opt soc.; coema china opt & optoelectr mfg assoc. |
会议录 | display devices and systems ii, 3560
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会议录出版者 | spie-int soc optical engineering ; 1000 20th st, po box 10, bellingham, wa 98227-0010 usa |
学科主题 | 光电子学 |
会议录出版地 | 1000 20th st, po box 10, bellingham, wa 98227-0010 usa |
语种 | 英语 |
ISSN号 | 0277-786x |
ISBN号 | 0-8194-3021-8 |
源URL | [http://ir.semi.ac.cn/handle/172111/13785] ![]() |
专题 | 半导体研究所_中国科学院半导体研究所(2009年前) |
推荐引用方式 GB/T 7714 | Wang GH,Ma XY,Zhang YF,et al. Coupled AlxGa1-xAs-AlAs distributed Bragg reflectors for high brightness AlGaInP light emitting diodes[C]. 见:conference on display devices and systems ii. beijing, peoples r china. sep 16-17, 1998. |
入库方式: OAI收割
来源:半导体研究所
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