中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Coupled AlxGa1-xAs-AlAs distributed Bragg reflectors for high brightness AlGaInP light emitting diodes

文献类型:会议论文

作者Wang GH ; Ma XY ; Zhang YF ; Peng HI ; Wang ST ; Li YZ ; Chen LH
出版日期1998
会议名称conference on display devices and systems ii
会议日期sep 16-17, 1998
会议地点beijing, peoples r china
关键词LED coupled distributed Bragg reflector MOCVD AlGaInP
页码89-92
通讯作者wang gh chinese acad sci inst semicond natl engn res ctr optoelect devices pob 912 beijing 100083 peoples r china.
中文摘要a novel coupled distributed bragg reflector (dbr) with double thickness periods was theoretically analyzed based on the spontaneous radiation properties of high brightness algainp light emitting diodes(led). several important factors were considered including spontaneous radiation angle distribution, absorption and ftr of dbr. calculation results showed that the optimum optical thickness of single layer of the dbr deviates from 1/4 lambda. aigainp high brightness light emitting diodes both with al0.5ga0.5as/alas coupled dbr and with conventional dbr were fabricated by metalorganic chemical vapor deposition(mocvd). x-ray double crystal diffraction and reflection spectrum were employed to determine the thickness and reflectivity of the dbr. it was found that reflectivity of coupled dbr is less sensitive to incident angle than conventional dbr, higher external quantum efficiency of light emitting diodes with coupled dbr was obtained than that with conventional dbr.
英文摘要a novel coupled distributed bragg reflector (dbr) with double thickness periods was theoretically analyzed based on the spontaneous radiation properties of high brightness algainp light emitting diodes(led). several important factors were considered including spontaneous radiation angle distribution, absorption and ftr of dbr. calculation results showed that the optimum optical thickness of single layer of the dbr deviates from 1/4 lambda. aigainp high brightness light emitting diodes both with al0.5ga0.5as/alas coupled dbr and with conventional dbr were fabricated by metalorganic chemical vapor deposition(mocvd). x-ray double crystal diffraction and reflection spectrum were employed to determine the thickness and reflectivity of the dbr. it was found that reflectivity of coupled dbr is less sensitive to incident angle than conventional dbr, higher external quantum efficiency of light emitting diodes with coupled dbr was obtained than that with conventional dbr.; 于2010-10-29批量导入; made available in dspace on 2010-10-29t06:37:04z (gmt). no. of bitstreams: 1 2970.pdf: 181769 bytes, checksum: 001ce22ca2ffce0628e443b321cb61af (md5) previous issue date: 1998; spie int soc opt engn.; cos chinese opt soc.; coema china opt & optoelectr mfg assoc.; chinese acad sci, inst semicond, natl engn res ctr optoelect devices, beijing 100083, peoples r china
收录类别CPCI-S
会议主办者spie int soc opt engn.; cos chinese opt soc.; coema china opt & optoelectr mfg assoc.
会议录display devices and systems ii, 3560
会议录出版者spie-int soc optical engineering ; 1000 20th st, po box 10, bellingham, wa 98227-0010 usa
学科主题光电子学
会议录出版地1000 20th st, po box 10, bellingham, wa 98227-0010 usa
语种英语
ISSN号0277-786x
ISBN号0-8194-3021-8
源URL[http://ir.semi.ac.cn/handle/172111/13785]  
专题半导体研究所_中国科学院半导体研究所(2009年前)
推荐引用方式
GB/T 7714
Wang GH,Ma XY,Zhang YF,et al. Coupled AlxGa1-xAs-AlAs distributed Bragg reflectors for high brightness AlGaInP light emitting diodes[C]. 见:conference on display devices and systems ii. beijing, peoples r china. sep 16-17, 1998.

入库方式: OAI收割

来源:半导体研究所

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