High brightness AlGaInP orange light emitting diodes
文献类型：会议论文
| 作者 | Li YZ ; Wang GH ; Ma XY ; Peng HI ; Wang ST ; Chen LH |
| 出版日期 | 1998 |
| 会议名称 | conference on display devices and systems ii |
| 会议日期 | sep 16-17, 1998 |
| 会议地点 | beijing, peoples r china |
| 关键词 | high brightness LED MOCVD AlGaInP |
| 页码 | 93-95 |
| 通讯作者 | li yz chinese acad sci inst semicond natl engn res ctr optoelect devices pob 912 beijing 100083 peoples r china. |
| 中文摘要 | orange algainp high brightness light emitting diodes (leds) were fabricated by low pressure metalorganic chemical vapor deposition(lp-mocvd) technology. algainp double heterojunction structure was used as active layer. 15 pairs of al0.5ga0.5as/alas distributed bragg reflector and 7 mu m al0.8ga0.2as current spreading layer were employed to reduce the absorption of gaas substrate and upper anode respectively. at 20ma the leds emitting wavelength was between 600-610nm with 18.3nm fwhm, 0.45mw radiation power and 1.7% external quantum efficiency. brightness of the led chips and led lamps with 15 degrees viewing angle(2 theta(1/2)) reached 30mcd and 1000mcd respectively. |
| 英文摘要 | orange algainp high brightness light emitting diodes (leds) were fabricated by low pressure metalorganic chemical vapor deposition(lp-mocvd) technology. algainp double heterojunction structure was used as active layer. 15 pairs of al0.5ga0.5as/alas distributed bragg reflector and 7 mu m al0.8ga0.2as current spreading layer were employed to reduce the absorption of gaas substrate and upper anode respectively. at 20ma the leds emitting wavelength was between 600-610nm with 18.3nm fwhm, 0.45mw radiation power and 1.7% external quantum efficiency. brightness of the led chips and led lamps with 15 degrees viewing angle(2 theta(1/2)) reached 30mcd and 1000mcd respectively.; 于2010-10-29批量导入; made available in dspace on 2010-10-29t06:37:04z (gmt). no. of bitstreams: 1 2971.pdf: 128103 bytes, checksum: 05e6da39798c2d75844d21d45c10241f (md5) previous issue date: 1998; spie int soc opt engn.; cos chinese opt soc.; coema china opt & optoelectr mfg assoc.; chinese acad sci, inst semicond, natl engn res ctr optoelect devices, beijing 100083, peoples r china |
| 收录类别 | CPCI-S |
| 会议主办者 | spie int soc opt engn.; cos chinese opt soc.; coema china opt & optoelectr mfg assoc. |
| 会议录 | display devices and systems ii, 3560
 |
| 会议录出版者 | spie-int soc optical engineering ; 1000 20th st, po box 10, bellingham, wa 98227-0010 usa |
| 学科主题 | 光电子学 |
| 会议录出版地 | 1000 20th st, po box 10, bellingham, wa 98227-0010 usa |
| 语种 | 英语 |
| ISSN号 | 0277-786x |
| ISBN号 | 0-8194-3021-8 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/13787]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Li YZ,Wang GH,Ma XY,et al. High brightness AlGaInP orange light emitting diodes[C]. 见:conference on display devices and systems ii. beijing, peoples r china. sep 16-17, 1998. |
入库方式： OAI收割
来源：半导体研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。