Light-induced change of Si-H bond absorption in hydrogenated amorphous silicon
文献类型：会议论文
| 作者 | Yue GZ ; Chen LF ; Wang Q ; Iwaniczko E ; Kong GL ; Baugh J ; Wu Y ; Han DX |
| 出版日期 | 1999 |
| 会议名称 | symposium on amorphous and microcrystalline silicon technology-1998, at the mrs spring meeting |
| 会议日期 | apr 14-17, 1998 |
| 会议地点 | san francisco, ca |
| 关键词 | VIBRATIONAL-SPECTRA |
| 页码 | 685-690 |
| 通讯作者 | yue gz acad sinica inst semicond pob 912 beijing 100083 peoples r china. |
| 中文摘要 | device-quality a-si:h films were prepared by glow discharge cvd with pure or h-diluted silane as well as by hot-wire cvd. the hydrogen content was varied from similar to 2 to 15 at. %. the si-h bond absorption and its light-soaking-induced changes were studied by ir and differential ir absorption spectroscopes. the results indicate that the more stable sample exhibits an increase of the absorption at wave number similar to 2000 cm(-1), and the less stable one exhibits a decrease at similar to 2040 cm(-1) and an increase at similar to 1880 cm(-1). |
| 英文摘要 | device-quality a-si:h films were prepared by glow discharge cvd with pure or h-diluted silane as well as by hot-wire cvd. the hydrogen content was varied from similar to 2 to 15 at. %. the si-h bond absorption and its light-soaking-induced changes were studied by ir and differential ir absorption spectroscopes. the results indicate that the more stable sample exhibits an increase of the absorption at wave number similar to 2000 cm(-1), and the less stable one exhibits a decrease at similar to 2040 cm(-1) and an increase at similar to 1880 cm(-1).; 于2010-10-29批量导入; made available in dspace on 2010-10-29t06:37:05z (gmt). no. of bitstreams: 0 previous issue date: 1999; mat res soc.; akzo nobel.; dpix a xerox co.; fuji elect corp res & dev ltd.; kaneka corp.; mitsui chem co ltd.; naps france.; natl renewable energy lab.; sanyo elect co ltd.; tokuyama corp.; voltaix inc.; acad sinica, inst semicond, beijing 100083, peoples r china |
| 收录类别 | CPCI-S |
| 会议主办者 | mat res soc.; akzo nobel.; dpix a xerox co.; fuji elect corp res & dev ltd.; kaneka corp.; mitsui chem co ltd.; naps france.; natl renewable energy lab.; sanyo elect co ltd.; tokuyama corp.; voltaix inc. |
| 会议录 | amorphous and microcrystalline silicon technology-1998, 507
 |
| 会议录出版者 | materials research society ; 506 keystone drive, warrendale, pa 15088-7563 usa |
| 学科主题 | 半导体材料 |
| 会议录出版地 | 506 keystone drive, warrendale, pa 15088-7563 usa |
| 语种 | 英语 |
| ISSN号 | 0272-9172 |
| ISBN号 | 1-55899-413-0 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/13795]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Yue GZ,Chen LF,Wang Q,et al. Light-induced change of Si-H bond absorption in hydrogenated amorphous silicon[C]. 见:symposium on amorphous and microcrystalline silicon technology-1998, at the mrs spring meeting. san francisco, ca. apr 14-17, 1998. |
入库方式： OAI收割
来源：半导体研究所
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