High quality hydrogenated amorphous silicon films with significantly improved stability
文献类型：会议论文
| 作者 | Sheng SR ; Liao XB ; Ma ZX ; Yue GZ ; Wang YQ ; Kong GL |
| 出版日期 | 1999 |
| 会议名称 | symposium on amorphous and microcrystalline silicon technology-1998, at the mrs spring meeting |
| 会议日期 | apr 14-17, 1998 |
| 会议地点 | san francisco, ca |
| 关键词 | A-SI-H LIGHT SOAKING PHOTOCONDUCTIVITY INCREASE |
| 页码 | 969-974 |
| 通讯作者 | sheng sr chinese acad sci state lab surface phys inst semicond beijing 100083 peoples r china. |
| 中文摘要 | high quality hydrogenated amorphous silicon (a-si:h) films have been prepared by a simple "uninterrupted growth/annealing" plasma enhanced chemical vapor deposition (pecvd) technique, combined with a subtle boron-compensated doping. these a-si:h films possess a high photosensitivity over 10(6), and exhibit no degradation in photoconductivity and a low light-induced defect density after prolonged illumination. the central idea is to control the growth conditions adjacent to the critical point of phase transition from amorphous to crystalline state, and yet to locate the fermi level close to the midgap. our results show that the improved stability and photosensitivity of a-si:h films prepared by this method can be mainly attributed to the formation of a more robust network structure and reduction in the precursors density of light-induced metastable defects. |
| 英文摘要 | high quality hydrogenated amorphous silicon (a-si:h) films have been prepared by a simple "uninterrupted growth/annealing" plasma enhanced chemical vapor deposition (pecvd) technique, combined with a subtle boron-compensated doping. these a-si:h films possess a high photosensitivity over 10(6), and exhibit no degradation in photoconductivity and a low light-induced defect density after prolonged illumination. the central idea is to control the growth conditions adjacent to the critical point of phase transition from amorphous to crystalline state, and yet to locate the fermi level close to the midgap. our results show that the improved stability and photosensitivity of a-si:h films prepared by this method can be mainly attributed to the formation of a more robust network structure and reduction in the precursors density of light-induced metastable defects.; 于2010-10-29批量导入; made available in dspace on 2010-10-29t06:37:06z (gmt). no. of bitstreams: 1 2977.pdf: 400270 bytes, checksum: 72f05f23a08943ecad002dfd73a63447 (md5) previous issue date: 1999; mat res soc.; akzo nobel.; dpix a xerox co.; fuji elect corp res & dev ltd.; kaneka corp.; mitsui chem co ltd.; naps france.; natl renewable energy lab.; sanyo elect co ltd.; tokuyama corp.; voltaix inc.; chinese acad sci, state lab surface phys, inst semicond, beijing 100083, peoples r china |
| 收录类别 | CPCI-S |
| 会议主办者 | mat res soc.; akzo nobel.; dpix a xerox co.; fuji elect corp res & dev ltd.; kaneka corp.; mitsui chem co ltd.; naps france.; natl renewable energy lab.; sanyo elect co ltd.; tokuyama corp.; voltaix inc. |
| 会议录 | amorphous and microcrystalline silicon technology-1998, 507
 |
| 会议录出版者 | materials research society ; 506 keystone drive, warrendale, pa 15088-7563 usa |
| 学科主题 | 半导体材料 |
| 会议录出版地 | 506 keystone drive, warrendale, pa 15088-7563 usa |
| 语种 | 英语 |
| ISSN号 | 0272-9172 |
| ISBN号 | 1-55899-413-0 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/13799]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Sheng SR,Liao XB,Ma ZX,et al. High quality hydrogenated amorphous silicon films with significantly improved stability[C]. 见:symposium on amorphous and microcrystalline silicon technology-1998, at the mrs spring meeting. san francisco, ca. apr 14-17, 1998. |
入库方式： OAI收割
来源：半导体研究所
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