Structural properties of polycrystalline silicon films formed by pulsed rapid thermal processing
文献类型：会议论文
| 作者 | Wang YQ ; Liao XB ; Diao HW ; He J ; Ma ZX ; Yue GZ ; Shen SR ; Kong GL ; Zhao YW ; Li ZM ; Yun F |
| 出版日期 | 1999 |
| 会议名称 | symposium on amorphous and microcrystalline silicon technology-1998, at the mrs spring meeting |
| 会议日期 | apr 14-17, 1998 |
| 会议地点 | san francisco, ca |
| 关键词 | AMORPHOUS-SILICON CRYSTALLIZATION TRANSISTORS |
| 页码 | 975-980 |
| 通讯作者 | wang yq chinese acad sci inst semicond state lab surface phys pob 912 beijing 100083 peoples r china. |
| 中文摘要 | a novel pulsed rapid thermal processing (prtp) method has been used for realizing the solid-phase crystallization of amorphous silicon films prepared by pecvd. the microstructure and surface morphology of the crystallized films are investigated by x-ray diffraction (xrd) and atomic force microscopy (afm). the results indicate that this prtp is a suitable post-crystallization technique for fabricating large-area polycrystalline silicon films with good structural qualities such as large grain size, small lattice microstain and smooth surface morphology on low-cost substrate. |
| 英文摘要 | a novel pulsed rapid thermal processing (prtp) method has been used for realizing the solid-phase crystallization of amorphous silicon films prepared by pecvd. the microstructure and surface morphology of the crystallized films are investigated by x-ray diffraction (xrd) and atomic force microscopy (afm). the results indicate that this prtp is a suitable post-crystallization technique for fabricating large-area polycrystalline silicon films with good structural qualities such as large grain size, small lattice microstain and smooth surface morphology on low-cost substrate.; 于2010-10-29批量导入; made available in dspace on 2010-10-29t06:37:06z (gmt). no. of bitstreams: 1 2978.pdf: 981462 bytes, checksum: 9b71dc58b556adbdf4b41552cc14a135 (md5) previous issue date: 1999; mat res soc.; akzo nobel.; dpix a xerox co.; fuji elect corp res & dev ltd.; kaneka corp.; mitsui chem co ltd.; naps france.; natl renewable energy lab.; sanyo elect co ltd.; tokuyama corp.; voltaix inc.; chinese acad sci, inst semicond, state lab surface phys, beijing 100083, peoples r china |
| 收录类别 | CPCI-S |
| 会议主办者 | mat res soc.; akzo nobel.; dpix a xerox co.; fuji elect corp res & dev ltd.; kaneka corp.; mitsui chem co ltd.; naps france.; natl renewable energy lab.; sanyo elect co ltd.; tokuyama corp.; voltaix inc. |
| 会议录 | amorphous and microcrystalline silicon technology-1998, 507
 |
| 会议录出版者 | materials research society ; 506 keystone drive, warrendale, pa 15088-7563 usa |
| 学科主题 | 半导体材料 |
| 会议录出版地 | 506 keystone drive, warrendale, pa 15088-7563 usa |
| 语种 | 英语 |
| ISSN号 | 0272-9172 |
| ISBN号 | 1-55899-413-0 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/13801]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Wang YQ,Liao XB,Diao HW,et al. Structural properties of polycrystalline silicon films formed by pulsed rapid thermal processing[C]. 见:symposium on amorphous and microcrystalline silicon technology-1998, at the mrs spring meeting. san francisco, ca. apr 14-17, 1998. |
入库方式： OAI收割
来源：半导体研究所
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