Structural and optical changes in GaAs/InAs/GaAs structure induced by thermal annealing
文献类型：会议论文
| 作者 | Mo QW ; Fan TW ; Gong Q ; Wu J ; Wang ZG ; Bai YQ ; Zhang W |
| 出版日期 | 1998 |
| 会议名称 | 5th international conference on solid-state and integrated circuit technology |
| 会议日期 | oct 21-23, 1998 |
| 会议地点 | beijing, peoples r china |
| 关键词 | MOLECULAR-BEAM EPITAXY COHERENT ISLANDS GAAS GROWTH DOTS DISLOCATIONS TEMPERATURE MECHANISMS SI(001) INGAAS |
| 页码 | 641-644 |
| 通讯作者 | mo qw chinese acad sci inst semicond lab semicond mat sci pob 912 beijing 100083 peoples r china. |
| 中文摘要 | self-organized inas quantum; dots sheets are grown on gaas(100) substrate and tapped by 80nm gaas layer with molecular beam epitaxy. samples were annealed and characterized with raman spectra, transmission electron microscopy (tem) and photolumincscence (pl). the raman spectra indicates arsenic clusters in the gaas capping layer. the tem analysis revealed the relaxation of strain in some inas islands with the introduction of the network of 90 dislocations. in addition, the structural changes also lead to the changes of the pl spectra from me inas islands. their correlation was discussed, our results suggest:est that annealing may be used to intentionally modify me properties of self-organized inas islands on gaas. |
| 英文摘要 | self-organized inas quantum; dots sheets are grown on gaas(100) substrate and tapped by 80nm gaas layer with molecular beam epitaxy. samples were annealed and characterized with raman spectra, transmission electron microscopy (tem) and photolumincscence (pl). the raman spectra indicates arsenic clusters in the gaas capping layer. the tem analysis revealed the relaxation of strain in some inas islands with the introduction of the network of 90 dislocations. in addition, the structural changes also lead to the changes of the pl spectra from me inas islands. their correlation was discussed, our results suggest:est that annealing may be used to intentionally modify me properties of self-organized inas islands on gaas.; 于2010-10-29批量导入; made available in dspace on 2010-10-29t06:37:10z (gmt). no. of bitstreams: 1 2993.pdf: 206728 bytes, checksum: 98aff314c21a04a85789d4e709b7dc6e (md5) previous issue date: 1998; chinese inst electr.; ieee electron devices soc.; ieee solid state circuits soc.; japan soc appl phys.; ursi commiss d.; iee, electr div, uk.; korea inst telemat & electr.; ieee beijing sect.; mat res soc.; natl nat sci fdn china.; chinese acad sci, inst semicond, lab semicond mat sci, beijing 100083, peoples r china |
| 收录类别 | CPCI-S |
| 会议主办者 | chinese inst electr.; ieee electron devices soc.; ieee solid state circuits soc.; japan soc appl phys.; ursi commiss d.; iee, electr div, uk.; korea inst telemat & electr.; ieee beijing sect.; mat res soc.; natl nat sci fdn china. |
| 会议录 | 1998 5th international conference on solid-state and integrated circuit technology proceedings
 |
| 会议录出版者 | ieee ; 345 e 47th st, new york, ny 10017 usa |
| 学科主题 | 半导体材料 |
| 会议录出版地 | 345 e 47th st, new york, ny 10017 usa |
| 语种 | 英语 |
| ISBN号 | 0-7803-4306-9 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/13831]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Mo QW,Fan TW,Gong Q,et al. Structural and optical changes in GaAs/InAs/GaAs structure induced by thermal annealing[C]. 见:5th international conference on solid-state and integrated circuit technology. beijing, peoples r china. oct 21-23, 1998. |
入库方式： OAI收割
来源：半导体研究所
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