Dislocations in InAs epilayers grown by MBE on GaAs substrates under various conditions
文献类型：会议论文
| 作者 | Wang HM ; Zeng YP ; Pan L ; Zhou HW ; Zhu ZP ; Kong MY |
| 出版日期 | 1998 |
| 会议名称 | symposium on electron microscopy of semiconducting materials and ulsi devices at the spring materials-research-society meeting |
| 会议日期 | apr 15-16, 1998 |
| 会议地点 | san francisco, ca |
| 页码 | 231-234 |
| 通讯作者 | wang hm chinese acad sci inst semicond div novel mat pob 912 beijing 100083 peoples r china. |
| 中文摘要 | using transmission electron microscopy, we studied the misfit and threading dislocations in inas epilayers. all the samples, with thickness around 0.5 mu m, were grown on gaas(001) substrates by molecular beam epitaxy under as-rich or in-rich conditions. the as-rich growth undergoes 2d-3d mode transition process, which was inhibited under in-rich surface. high step formation energy under as-deficient reconstruction inhibits the formation of 3d islands and leads to 2d growth. the mechanism of misfit dislocations formation was different under different growth condition which caused the variation of threading dislocation density in the epilayers. |
| 收录类别 | CPCI-S |
| 会议主办者 | mat res soc. |
| 会议录 | electron microscopy of semiconducting materials and ulsi devices, 523
 |
| 会议录出版者 | materials research society ; 506 keystone drive, warrendale, pa 15088-7563 usa |
| 学科主题 | 半导体材料 |
| 会议录出版地 | 506 keystone drive, warrendale, pa 15088-7563 usa |
| 语种 | 英语 |
| ISSN号 | 0272-9172 |
| ISBN号 | 1-55899-429-7 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/13845]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Wang HM,Zeng YP,Pan L,et al. Dislocations in InAs epilayers grown by MBE on GaAs substrates under various conditions[C]. 见:symposium on electron microscopy of semiconducting materials and ulsi devices at the spring materials-research-society meeting. san francisco, ca. apr 15-16, 1998. |
入库方式： OAI收割
来源：半导体研究所
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