On the nature of iron in InP: A FTIR study
文献类型：会议论文
| 作者 | Han YJ ; Liu XL ; Lao JH ; Lin LY |
| 出版日期 | 1998 |
| 会议名称 | conference on integrated optoelectronics ii |
| 会议日期 | sep 18-19, 1998 |
| 会议地点 | beijing, peoples r china |
| 关键词 | iron phonon sideband semi-insulating InP |
| 页码 | 1-4 |
| 通讯作者 | han yj chinese acad sci inst semicond lab semicond mat sci pob 912 beijing 100083 peoples r china. |
| 中文摘要 | fe is still the commonly used dopant to fabricate semi-insulating(si) inp, a key material for high-speed electronic and optoelectronic devices. high resolved absorption spectra of the internal d-d shell transitions at fe2+ in inp and the related phonon sidebands and a series of iron related absorption lines are presented. detailed infrared absorption study of the characteristic spectra of four zero-phonon lines(zpls), which are attributed to transitions within the 5d ground state of fe2+ (3d(6)) on the indium site in a tetrahedral crystal field of phosphorus atoms and their temperature effects are given. |
| 英文摘要 | fe is still the commonly used dopant to fabricate semi-insulating(si) inp, a key material for high-speed electronic and optoelectronic devices. high resolved absorption spectra of the internal d-d shell transitions at fe2+ in inp and the related phonon sidebands and a series of iron related absorption lines are presented. detailed infrared absorption study of the characteristic spectra of four zero-phonon lines(zpls), which are attributed to transitions within the 5d ground state of fe2+ (3d(6)) on the indium site in a tetrahedral crystal field of phosphorus atoms and their temperature effects are given.; 于2010-10-29批量导入; made available in dspace on 2010-10-29t06:37:16z (gmt). no. of bitstreams: 1 3028.pdf: 171085 bytes, checksum: fe81defae9452ddf3b0c55241c8295b4 (md5) previous issue date: 1998; spie int soc opt engn.; cos chinese opt soc.; coema.; chinese acad sci, inst semicond, lab semicond mat sci, beijing 100083, peoples r china |
| 收录类别 | CPCI-S |
| 会议主办者 | spie int soc opt engn.; cos chinese opt soc.; coema. |
| 会议录 | integrated optoelectronics ii, 3551
 |
| 会议录出版者 | spie-int soc optical engineering ; 1000 20th st, po box 10, bellingham, wa 98227-0010 usa |
| 学科主题 | 光电子学 |
| 会议录出版地 | 1000 20th st, po box 10, bellingham, wa 98227-0010 usa |
| 语种 | 英语 |
| ISSN号 | 0277-786x |
| ISBN号 | 0-8194-3012-9 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/13851]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Han YJ,Liu XL,Lao JH,et al. On the nature of iron in InP: A FTIR study[C]. 见:conference on integrated optoelectronics ii. beijing, peoples r china. sep 18-19, 1998. |
入库方式： OAI收割
来源：半导体研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。