Dynamics of formation of defects in annealed InP
文献类型：会议论文
| 作者 | Han YJ ; Liu XL ; Jiao JH ; Lin LY |
| 出版日期 | 1998 |
| 会议名称 | conference on integrated optoelectronics ii |
| 会议日期 | sep 18-19, 1998 |
| 会议地点 | beijing, peoples r china |
| 关键词 | defects formation hydrogen related defects semi-insulating InP |
| 页码 | 5-8 |
| 通讯作者 | han yj chinese acad sci inst semicond pob 912 beijing 100083 peoples r china. |
| 中文摘要 | dynamics of formation of defects in the annealed nominally undoped semi-insulating inp obtained by high pressure, high temperature annealing of high purity materials is proposed. incorporated hydrogen passivates vacancy at indium site from annihilation forming fully hydrogenated indium vacancy which dissociates leaving large lattice relaxation behind, deep donors, mainly larger complexes involving phosphorus at indium site and isolated hydrogen defects are created in nominally undoped inp after annealing. also created are acceptor levels such as vacancy at indium site. carrier charge compensation mechanism in nominally undoped inp upon annealing at high temperature is given. microscopic models of hydrogen related defects are given. structural, electronic and vibrational properties of lvms related to hydrogen as well as their temperature effect are discussed. |
| 英文摘要 | dynamics of formation of defects in the annealed nominally undoped semi-insulating inp obtained by high pressure, high temperature annealing of high purity materials is proposed. incorporated hydrogen passivates vacancy at indium site from annihilation forming fully hydrogenated indium vacancy which dissociates leaving large lattice relaxation behind, deep donors, mainly larger complexes involving phosphorus at indium site and isolated hydrogen defects are created in nominally undoped inp after annealing. also created are acceptor levels such as vacancy at indium site. carrier charge compensation mechanism in nominally undoped inp upon annealing at high temperature is given. microscopic models of hydrogen related defects are given. structural, electronic and vibrational properties of lvms related to hydrogen as well as their temperature effect are discussed.; 于2010-10-29批量导入; made available in dspace on 2010-10-29t06:37:17z (gmt). no. of bitstreams: 1 3029.pdf: 213859 bytes, checksum: e3c84d75f019952bc4fa4fd7e743515a (md5) previous issue date: 1998; spie int soc opt engn.; cos chinese opt soc.; coema.; chinese acad sci, inst semicond, beijing 100083, peoples r china |
| 收录类别 | CPCI-S |
| 会议主办者 | spie int soc opt engn.; cos chinese opt soc.; coema. |
| 会议录 | integrated optoelectronics ii, 3551
 |
| 会议录出版者 | spie-int soc optical engineering ; 1000 20th st, po box 10, bellingham, wa 98227-0010 usa |
| 学科主题 | 光电子学 |
| 会议录出版地 | 1000 20th st, po box 10, bellingham, wa 98227-0010 usa |
| 语种 | 英语 |
| ISSN号 | 0277-786x |
| ISBN号 | 0-8194-3012-9 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/13853]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Han YJ,Liu XL,Jiao JH,et al. Dynamics of formation of defects in annealed InP[C]. 见:conference on integrated optoelectronics ii. beijing, peoples r china. sep 18-19, 1998. |
入库方式： OAI收割
来源：半导体研究所
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