A study on GaP/Si heterostructures grown by GS-MBE
文献类型：会议论文
| 作者 | Yu JZ ; Chen BW ; Yu Z ; Wang QM |
| 出版日期 | 1998 |
| 会议名称 | conference on integrated optoelectronics ii |
| 会议日期 | sep 18-19, 1998 |
| 会议地点 | beijing, peoples r china |
| 关键词 | GaP/Si heterostructure GS-MBE lattice match X-ray double crystal diffraction photoluminescence (PL) |
| 页码 | 9-12 |
| 通讯作者 | yu jz chinese acad sci inst semicond beijing 100083 peoples r china. |
| 中文摘要 | gap/si is a promoting heterostructure for si-based optoelectronic devices since lattice constants of gap and si are so closed that they can match with each other. gap was successfully grow on (100) si subtracts by gas-source molecular bean epitaxy (gs-mbe) in the study. the gap/si heterostructure was characterized by x-ray double crystal diffraction, anger electron spectrograph, x-ray photonic spectrograph and photoluminescence (pl) measurements. the results showed that the epitaxial gap layers are single crystalline, in which a parallel to and a (perpendicular to)are 0.54322 and 0.54625 nm, respectively. the peaks in pl spectra of gap epitaxial layer grown on si are 650, 627 and 640 nm, respectively. the study demonstrated that gap/si is a kind of lattice matched heterostructures and will be a promoting materials for future integrated photonics. |
| 英文摘要 | gap/si is a promoting heterostructure for si-based optoelectronic devices since lattice constants of gap and si are so closed that they can match with each other. gap was successfully grow on (100) si subtracts by gas-source molecular bean epitaxy (gs-mbe) in the study. the gap/si heterostructure was characterized by x-ray double crystal diffraction, anger electron spectrograph, x-ray photonic spectrograph and photoluminescence (pl) measurements. the results showed that the epitaxial gap layers are single crystalline, in which a parallel to and a (perpendicular to)are 0.54322 and 0.54625 nm, respectively. the peaks in pl spectra of gap epitaxial layer grown on si are 650, 627 and 640 nm, respectively. the study demonstrated that gap/si is a kind of lattice matched heterostructures and will be a promoting materials for future integrated photonics.; 于2010-10-29批量导入; made available in dspace on 2010-10-29t06:37:17z (gmt). no. of bitstreams: 1 3030.pdf: 249575 bytes, checksum: 5214b25eb4dbcd11e27bbcc984e9f953 (md5) previous issue date: 1998; spie int soc opt engn.; cos chinese opt soc.; coema.; chinese acad sci, inst semicond, beijing 100083, peoples r china |
| 收录类别 | CPCI-S |
| 会议主办者 | spie int soc opt engn.; cos chinese opt soc.; coema. |
| 会议录 | integrated optoelectronics ii, 3551
 |
| 会议录出版者 | spie-int soc optical engineering ; 1000 20th st, po box 10, bellingham, wa 98227-0010 usa |
| 学科主题 | 光电子学 |
| 会议录出版地 | 1000 20th st, po box 10, bellingham, wa 98227-0010 usa |
| 语种 | 英语 |
| ISSN号 | 0277-786x |
| ISBN号 | 0-8194-3012-9 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/13855]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Yu JZ,Chen BW,Yu Z,et al. A study on GaP/Si heterostructures grown by GS-MBE[C]. 见:conference on integrated optoelectronics ii. beijing, peoples r china. sep 18-19, 1998. |
入库方式： OAI收割
来源：半导体研究所
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