Electroluminescence and photoluminescence of Si/SiGe self-assembly quantum dot structures
文献类型：会议论文
| 作者 | Si JJ ; Yang QQ ; Wang HJ ; Wang QM |
| 出版日期 | 1998 |
| 会议名称 | conference on integrated optoelectronics ii |
| 会议日期 | sep 18-19, 1998 |
| 会议地点 | beijing, peoples r china |
| 关键词 | Si/SiGe quantum dot electroluminescence photoluminescence |
| 页码 | 49-52 |
| 通讯作者 | si jj chinese acad sci inst semicond state key lab integrated optoelect beijing 100083 peoples r china. |
| 中文摘要 | comparative electroluminescence (el) and photoluminescence (pl) measurements were performed on si/si0.6ge0.4 self-assembly quantum dots (qds) structures. the samples were grown pseudomorphically by molecular beam epitaxy, and pin diodes for electroluminescence were fabricated. assisted tem pictures shows the sige self-assembly qds are platelike. and it showed that the diameters of qds are in range from 40nm to 140nm with the most in 120nm. both el and pl has a wide luminescence peak due to wide distribution of qds dimensions. at low temperature (t=14k), el peak has a red shift compared to the corresponding pl peak. its full-width at half-maximum (fwhm) is about 97mev, a little smaller than that of corresponding pl peak. the reasons of position and fwhm changes of el peak from qds have been discussed. |
| 英文摘要 | comparative electroluminescence (el) and photoluminescence (pl) measurements were performed on si/si0.6ge0.4 self-assembly quantum dots (qds) structures. the samples were grown pseudomorphically by molecular beam epitaxy, and pin diodes for electroluminescence were fabricated. assisted tem pictures shows the sige self-assembly qds are platelike. and it showed that the diameters of qds are in range from 40nm to 140nm with the most in 120nm. both el and pl has a wide luminescence peak due to wide distribution of qds dimensions. at low temperature (t=14k), el peak has a red shift compared to the corresponding pl peak. its full-width at half-maximum (fwhm) is about 97mev, a little smaller than that of corresponding pl peak. the reasons of position and fwhm changes of el peak from qds have been discussed.; 于2010-10-29批量导入; made available in dspace on 2010-10-29t06:37:18z (gmt). no. of bitstreams: 1 3034.pdf: 815142 bytes, checksum: e6156a05a630870ba1e17dab7cf07ab6 (md5) previous issue date: 1998; spie int soc opt engn.; cos chinese opt soc.; coema.; chinese acad sci, inst semicond, state key lab integrated optoelect, beijing 100083, peoples r china |
| 收录类别 | CPCI-S |
| 会议主办者 | spie int soc opt engn.; cos chinese opt soc.; coema. |
| 会议录 | integrated optoelectronics ii, 3551
 |
| 会议录出版者 | spie-int soc optical engineering ; 1000 20th st, po box 10, bellingham, wa 98227-0010 usa |
| 学科主题 | 光电子学 |
| 会议录出版地 | 1000 20th st, po box 10, bellingham, wa 98227-0010 usa |
| 语种 | 英语 |
| ISSN号 | 0277-786x |
| ISBN号 | 0-8194-3012-9 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/13863]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Si JJ,Yang QQ,Wang HJ,et al. Electroluminescence and photoluminescence of Si/SiGe self-assembly quantum dot structures[C]. 见:conference on integrated optoelectronics ii. beijing, peoples r china. sep 18-19, 1998. |
入库方式： OAI收割
来源：半导体研究所
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