Growth of Fe doped semi-insulating InP by LP-MOCVD
文献类型：会议论文
| 作者 | Yan XJ ; Zhu HL ; Wang W ; Xu GY ; Zhou F ; Ma CH ; Wang XJ ; Tian HL ; Zhang JY ; Wu RH ; Wang QM |
| 出版日期 | 1998 |
| 会议名称 | conference on integrated optoelectronics ii |
| 会议日期 | sep 18-19, 1998 |
| 会议地点 | beijing, peoples r china |
| 关键词 | semi-insulating Fe-doped MOCVD |
| 页码 | 80-83 |
| 通讯作者 | yan xj chinese acad sci inst semicond beijing 100083 peoples r china. |
| 中文摘要 | the semi-insulating inp has been grown using ferrocene as a dopant source by low pressure mocvd. fe doped semiinsulating inp material whose resistivity is equal to 2.0x10(8)omega*cm and the breakdown field is beater than 4.0x10(4)vcm(-1) has been achieved. it is found that the magnitude of resistivity increases with growing pressure enhancement under keeping tmin, ph3, ferrocene (fe(c5h5)(2)) flow constant at 620 degrees c growth temperature. moreover, the experimental results which resistivity varies with ferrocene mole fraction are given. it is estimated that active fe doping efficiency; eta, is equal to 8.7x10(-4) at 20mbar growth pressure and 620 degrees c growth temperature by the comparison of calculated and experimental results. |
| 英文摘要 | the semi-insulating inp has been grown using ferrocene as a dopant source by low pressure mocvd. fe doped semiinsulating inp material whose resistivity is equal to 2.0x10(8)omega*cm and the breakdown field is beater than 4.0x10(4)vcm(-1) has been achieved. it is found that the magnitude of resistivity increases with growing pressure enhancement under keeping tmin, ph3, ferrocene (fe(c5h5)(2)) flow constant at 620 degrees c growth temperature. moreover, the experimental results which resistivity varies with ferrocene mole fraction are given. it is estimated that active fe doping efficiency; eta, is equal to 8.7x10(-4) at 20mbar growth pressure and 620 degrees c growth temperature by the comparison of calculated and experimental results.; 于2010-10-29批量导入; made available in dspace on 2010-10-29t06:37:19z (gmt). no. of bitstreams: 1 3036.pdf: 549025 bytes, checksum: a31ac8300175e968b3f454e69352970a (md5) previous issue date: 1998; spie int soc opt engn.; cos chinese opt soc.; coema.; chinese acad sci, inst semicond, beijing 100083, peoples r china |
| 收录类别 | CPCI-S |
| 会议主办者 | spie int soc opt engn.; cos chinese opt soc.; coema. |
| 会议录 | integrated optoelectronics ii, 3551
 |
| 会议录出版者 | spie-int soc optical engineering ; 1000 20th st, po box 10, bellingham, wa 98227-0010 usa |
| 学科主题 | 光电子学 |
| 会议录出版地 | 1000 20th st, po box 10, bellingham, wa 98227-0010 usa |
| 语种 | 英语 |
| ISSN号 | 0277-786x |
| ISBN号 | 0-8194-3012-9 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/13867]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Yan XJ,Zhu HL,Wang W,et al. Growth of Fe doped semi-insulating InP by LP-MOCVD[C]. 见:conference on integrated optoelectronics ii. beijing, peoples r china. sep 18-19, 1998. |
入库方式： OAI收割
来源：半导体研究所
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