The effect of low temperature GaAs nucleation on the growth of GaN on Silicon (001) during MOVPE process
文献类型：会议论文
| 作者 | Zheng LX ; Liang JW ; Yang H ; Li JB ; Wang YT ; Xu DP ; Li XF ; Duan LH ; Hu XW |
| 出版日期 | 1998 |
| 会议名称 | symposium on nitride semiconductors, at the 1997 mrs fall meeting |
| 会议日期 | dec 01-05, 1997 |
| 会议地点 | boston, ma |
| 页码 | 69-74 |
| 通讯作者 | zheng lx chinese acad sci inst semicond beijing 100083 peoples r china. |
| 中文摘要 | high quality cubic gan was grown on silicon (001) by metalorganic vapor phase epitaxy (movpe) using a gaas nucleation layer grown at low temperature. the influence of various nucleation conditions on the gan epilayers' quality was investigated. we found that the gaas nucleation layer grown by atomic layer epitaxy (ale) could improve the quality of gan films by depressing the formation of mixed phase. photoluminescence (pl) and x-ray diffraction were used to characterize the properties of gan epilayers. high quality gan epilayers with pl full width at half maximum (fwhm) of 130mev at room temperature and x-ray fwhm of 70 arc-min were obtained by using 10-20nm gaas nucleation layer grown by ale. |
| 英文摘要 | high quality cubic gan was grown on silicon (001) by metalorganic vapor phase epitaxy (movpe) using a gaas nucleation layer grown at low temperature. the influence of various nucleation conditions on the gan epilayers' quality was investigated. we found that the gaas nucleation layer grown by atomic layer epitaxy (ale) could improve the quality of gan films by depressing the formation of mixed phase. photoluminescence (pl) and x-ray diffraction were used to characterize the properties of gan epilayers. high quality gan epilayers with pl full width at half maximum (fwhm) of 130mev at room temperature and x-ray fwhm of 70 arc-min were obtained by using 10-20nm gaas nucleation layer grown by ale.; 于2010-10-29批量导入; made available in dspace on 2010-10-29t06:37:19z (gmt). no. of bitstreams: 1 3038.pdf: 349968 bytes, checksum: 018876b5acf75f777d9ae649a1c66eb9 (md5) previous issue date: 1998; mat res soc.; aixtron semiconductor technol gmbh.; bede sci inc.; emcore.; lake shore cryotron inc.; morton int.; mmr technol inc.; nichia chem ind.; renishaw plc.; rockwell int.; siemens.; sula technol.; svt assoc inc.; thomas swan & co ltd.; toyoda gosel co ltd.; xerox palo alto res ctr.; chinese acad sci, inst semicond, beijing 100083, peoples r china |
| 收录类别 | CPCI-S |
| 会议主办者 | mat res soc.; aixtron semiconductor technol gmbh.; bede sci inc.; emcore.; lake shore cryotron inc.; morton int.; mmr technol inc.; nichia chem ind.; renishaw plc.; rockwell int.; siemens.; sula technol.; svt assoc inc.; thomas swan & co ltd.; toyoda gosel co ltd.; xerox palo alto res ctr. |
| 会议录 | nitride semiconductors, 482
 |
| 会议录出版者 | materials research society ; 506 keystone drive, warrendale, pa 15088-7563 usa |
| 学科主题 | 半导体材料 |
| 会议录出版地 | 506 keystone drive, warrendale, pa 15088-7563 usa |
| 语种 | 英语 |
| ISSN号 | 0272-9172 |
| ISBN号 | 1-55899-387-8 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/13871]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Zheng LX,Liang JW,Yang H,et al. The effect of low temperature GaAs nucleation on the growth of GaN on Silicon (001) during MOVPE process[C]. 见:symposium on nitride semiconductors, at the 1997 mrs fall meeting. boston, ma. dec 01-05, 1997. |
入库方式： OAI收割
来源：半导体研究所
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