High temperature operation of 650nm AlGaInP quantum well laser diodes grown by LP-MOCVD
文献类型：会议论文
| 作者 | Ma XY ; Cao Q ; Wang ST ; Guo L ; Lian P ; Wang LM ; Zhang XY ; Yang YL ; Zhang HQ ; Wang GH ; Chen LH |
| 出版日期 | 1998 |
| 会议名称 | spie conference on optoelectronic materials and devices |
| 会议日期 | jul 09-11, 1998 |
| 会议地点 | taipei, taiwan |
| 关键词 | AlGaInP quantum well laser diode MOCVD |
| 页码 | 131-136 |
| 通讯作者 | ma xy chinese acad sci inst semicond pob 912 beijing 100083 peoples r china. |
| 中文摘要 | low threshold current and high temperature operation of 650nm algainp quantum well laser diodes grown by low pressure metal organic chemical vapor deposition (lp-mocvd) are reported in this paper. 650nm laser diodes with threshold current as low as 22-24ma at room temperature, and the operating temperature over 90 degrees c at cw output power 5 mw were achieved in this study. these lasers are stable during 72 hours burn in under 5mw at 90 degrees c. |
| 英文摘要 | low threshold current and high temperature operation of 650nm algainp quantum well laser diodes grown by low pressure metal organic chemical vapor deposition (lp-mocvd) are reported in this paper. 650nm laser diodes with threshold current as low as 22-24ma at room temperature, and the operating temperature over 90 degrees c at cw output power 5 mw were achieved in this study. these lasers are stable during 72 hours burn in under 5mw at 90 degrees c.; 于2010-10-29批量导入; made available in dspace on 2010-10-29t06:37:20z (gmt). no. of bitstreams: 1 3039.pdf: 315087 bytes, checksum: 93c1f88bd3c70e34d4076ffa95f76a7d (md5) previous issue date: 1998; spie, taiwan chapter.; photon ind dev assoc.; natl sci council, taiwan.; chinese acad sci, inst semicond, beijing 100083, peoples r china |
| 收录类别 | CPCI-S |
| 会议主办者 | spie, taiwan chapter.; photon ind dev assoc.; natl sci council, taiwan. |
| 会议录 | optoelectronic materials and devices, 3419
 |
| 会议录出版者 | spie-int soc optical engineering ; 1000 20th st, po box 10, bellingham, wa 98227-0010 usa |
| 学科主题 | 光电子学 |
| 会议录出版地 | 1000 20th st, po box 10, bellingham, wa 98227-0010 usa |
| 语种 | 英语 |
| ISSN号 | 0277-786x |
| ISBN号 | 0-8194-2873-6 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/13873]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Ma XY,Cao Q,Wang ST,et al. High temperature operation of 650nm AlGaInP quantum well laser diodes grown by LP-MOCVD[C]. 见:spie conference on optoelectronic materials and devices. taipei, taiwan. jul 09-11, 1998. |
入库方式： OAI收割
来源：半导体研究所
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