Formation mechanism of defects in annealed InP
文献类型：会议论文
| 作者 | Han YJ ; Liu XL ; Jiao JH ; Lin LY |
| 出版日期 | 1998 |
| 会议名称 | spie conference on optoelectronic materials and devices |
| 会议日期 | jul 09-11, 1998 |
| 会议地点 | taipei, taiwan |
| 关键词 | defects formation hydrogen related defects semi-insulating InP |
| 页码 | 346-353 |
| 通讯作者 | han yj chinese acad sci inst semicond pob 912 beijing 100083 peoples r china. |
| 中文摘要 | dynamical formation mechanism of defects in the annealed nominally undoped semi-insulating inp obtained by high pressure, high temperature annealing of high purity materials is proposed. local vibrational modes in tenths of inp samples reveal clearly existence of complexes related to hydrogen. complexes of vacancy at indium site with one to four hydrogen atoms and isolated hydrogen or hydrogen dimers, complexes of hydrogen with various impurities are investigated by ftir. hydrogen can acts as an actuator for generation of antistructure defects. fully hydrogenated indium vacancy dissociates leaving large lattice relaxation behind, deep donors, mainly larger complexes involving phosphorus at indium site and isolated hydrogen defects are created in nominally undoped inp after annealing. also created are acceptor levels such as vacancy at indium site. carrier charge compensation mechanism in nominally undoped inp upon annealing at high temperature is given. microscopic models of hydrogen related defects are given. structural, electronic and vibrational properties of lvms related to hydrogen as well as their temperature effect are discussed. |
| 英文摘要 | dynamical formation mechanism of defects in the annealed nominally undoped semi-insulating inp obtained by high pressure, high temperature annealing of high purity materials is proposed. local vibrational modes in tenths of inp samples reveal clearly existence of complexes related to hydrogen. complexes of vacancy at indium site with one to four hydrogen atoms and isolated hydrogen or hydrogen dimers, complexes of hydrogen with various impurities are investigated by ftir. hydrogen can acts as an actuator for generation of antistructure defects. fully hydrogenated indium vacancy dissociates leaving large lattice relaxation behind, deep donors, mainly larger complexes involving phosphorus at indium site and isolated hydrogen defects are created in nominally undoped inp after annealing. also created are acceptor levels such as vacancy at indium site. carrier charge compensation mechanism in nominally undoped inp upon annealing at high temperature is given. microscopic models of hydrogen related defects are given. structural, electronic and vibrational properties of lvms related to hydrogen as well as their temperature effect are discussed.; 于2010-10-29批量导入; made available in dspace on 2010-10-29t06:37:20z (gmt). no. of bitstreams: 1 3040.pdf: 392263 bytes, checksum: dd4d290baa0de6fc549dd1b325a200ec (md5) previous issue date: 1998; spie, taiwan chapter.; photon ind dev assoc.; natl sci council, taiwan.; chinese acad sci, inst semicond, beijing 100083, peoples r china |
| 收录类别 | CPCI-S |
| 会议主办者 | spie, taiwan chapter.; photon ind dev assoc.; natl sci council, taiwan. |
| 会议录 | optoelectronic materials and devices, 3419
 |
| 会议录出版者 | spie-int soc optical engineering ; 1000 20th st, po box 10, bellingham, wa 98227-0010 usa |
| 学科主题 | 光电子学 |
| 会议录出版地 | 1000 20th st, po box 10, bellingham, wa 98227-0010 usa |
| 语种 | 英语 |
| ISSN号 | 0277-786x |
| ISBN号 | 0-8194-2873-6 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/13875]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Han YJ,Liu XL,Jiao JH,et al. Formation mechanism of defects in annealed InP[C]. 见:spie conference on optoelectronic materials and devices. taipei, taiwan. jul 09-11, 1998. |
入库方式： OAI收割
来源：半导体研究所
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