High performance 1.55 mu m InGaAsP/InP strained layer quantum well laser diodes fabricated by MOCVD overgrowth method
文献类型：会议论文
| 作者 | Ma XY ; Cao Q ; Wang ST ; Guo L ; Wang ZM ; Wang LM ; He GP ; Yang YL ; Zhang HQ ; Zhou XN ; Chen LH |
| 出版日期 | 1998 |
| 会议名称 | semiconductor lasers iii |
| 会议日期 | sep 16-18, 1998 |
| 会议地点 | beijing, peoples r china |
| 关键词 | InGaAsP strained layer quantum well laser diode MOCVD |
| 页码 | 8-11 |
| 通讯作者 | ma xy chinese acad sci inst semicond pob 912 beijing 100083 peoples r china. |
| 中文摘要 | high performance uncooled 1.55 mu m ingaasp/inp strained layer quantum well (sl-qw) lasers grown by low pressure metal organic chemical vapor deposition (lp-mocvd) were reported in this paper. whole mocvd over growth method were applied in this work. the threshold currents of 5ma and the highest lasing temperature of 122 degrees c were obtained. |
| 英文摘要 | high performance uncooled 1.55 mu m ingaasp/inp strained layer quantum well (sl-qw) lasers grown by low pressure metal organic chemical vapor deposition (lp-mocvd) were reported in this paper. whole mocvd over growth method were applied in this work. the threshold currents of 5ma and the highest lasing temperature of 122 degrees c were obtained.; 于2010-10-29批量导入; made available in dspace on 2010-10-29t06:37:21z (gmt). no. of bitstreams: 1 3043.pdf: 193648 bytes, checksum: d8061b952f1caf2fdb7f81a30abfdcb7 (md5) previous issue date: 1998; spie.; cos.; coema.; chinese acad sci, inst semicond, beijing 100083, peoples r china |
| 收录类别 | CPCI-S |
| 会议主办者 | spie.; cos.; coema. |
| 会议录 | semiconductor lasers iii, 3547
 |
| 会议录出版者 | spie-int soc optical engineering ; 1000 20th st, po box 10, bellingham, wa 98227-0010 usa |
| 学科主题 | 半导体物理 |
| 会议录出版地 | 1000 20th st, po box 10, bellingham, wa 98227-0010 usa |
| 语种 | 英语 |
| ISSN号 | 0277-786x |
| ISBN号 | 0-8194-3008-0 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/13881]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Ma XY,Cao Q,Wang ST,et al. High performance 1.55 mu m InGaAsP/InP strained layer quantum well laser diodes fabricated by MOCVD overgrowth method[C]. 见:semiconductor lasers iii. beijing, peoples r china. sep 16-18, 1998. |
入库方式： OAI收割
来源：半导体研究所
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