Growth and fabrication of high performance 980nm strained InGaAs quantum well lasers using novel hybrid material system of InGaAsP and AlGaAs
文献类型：会议论文
| 作者 | Yang GW ; Xu ZT ; Xu JY ; Ma XY ; Zhang JM ; Chen LH |
| 出版日期 | 1998 |
| 会议名称 | semiconductor lasers iii |
| 会议日期 | sep 16-18, 1998 |
| 会议地点 | beijing, peoples r china |
| 关键词 | strained quantum well semiconductor lasers |
| 页码 | 64-70 |
| 通讯作者 | yang gw chinese acad sci inst semicond beijing 100083 peoples r china. |
| 中文摘要 | in this paper, we report on the design, growth and fabrication of 980nm strained ingaas quantum well lasers employing novel material system of al-free active region and algaas cladding layers. the use of algaas cladding instead of ingap provides potential advantages in laser structure design, improvement of surface morphology and laser performance. we demonstrate an optimized broad-waveguide structure for obtaining high power 980nm quantum well lasers with low vertical beam divergence. the laser structure was grown by low-pressure metalorganic chemical vapor deposition, which exhibit a high internal quantum efficiency of similar to 90% and a low internal loss of 1.5-2.5 cm(-1). the broad-area and ridge-waveguide laser devices are both fabricated. for 100 mu m wide stripe lasers with cavity length of 800 mu m, a low threshold current of 170ma, a high slope efficiency of 1.0w/a and high output power of more than 3.5w are achieved. the temperature dependences of the threshold current and the emitting spectra demonstrate a very high characteristic temperature coefficient (t-o) of 200-250k and a wavelength shift coefficient of 0.34nm/degrees c. for 4 mu m-width ridge waveguide structure laser devices, a maximum output power of 340mw with god-free thermal roll-over characteristics is obtained. |
| 英文摘要 | in this paper, we report on the design, growth and fabrication of 980nm strained ingaas quantum well lasers employing novel material system of al-free active region and algaas cladding layers. the use of algaas cladding instead of ingap provides potential advantages in laser structure design, improvement of surface morphology and laser performance. we demonstrate an optimized broad-waveguide structure for obtaining high power 980nm quantum well lasers with low vertical beam divergence. the laser structure was grown by low-pressure metalorganic chemical vapor deposition, which exhibit a high internal quantum efficiency of similar to 90% and a low internal loss of 1.5-2.5 cm(-1). the broad-area and ridge-waveguide laser devices are both fabricated. for 100 mu m wide stripe lasers with cavity length of 800 mu m, a low threshold current of 170ma, a high slope efficiency of 1.0w/a and high output power of more than 3.5w are achieved. the temperature dependences of the threshold current and the emitting spectra demonstrate a very high characteristic temperature coefficient (t-o) of 200-250k and a wavelength shift coefficient of 0.34nm/degrees c. for 4 mu m-width ridge waveguide structure laser devices, a maximum output power of 340mw with god-free thermal roll-over characteristics is obtained.; 于2010-10-29批量导入; made available in dspace on 2010-10-29t06:37:21z (gmt). no. of bitstreams: 1 3045.pdf: 365307 bytes, checksum: 98923527c6104c6f473f9db745278729 (md5) previous issue date: 1998; spie.; cos.; coema.; chinese acad sci, inst semicond, beijing 100083, peoples r china |
| 收录类别 | CPCI-S |
| 会议主办者 | spie.; cos.; coema. |
| 会议录 | semiconductor lasers iii, 3547
 |
| 会议录出版者 | spie-int soc optical engineering ; 1000 20th st, po box 10, bellingham, wa 98227-0010 usa |
| 学科主题 | 半导体物理 |
| 会议录出版地 | 1000 20th st, po box 10, bellingham, wa 98227-0010 usa |
| 语种 | 英语 |
| ISSN号 | 0277-786x |
| ISBN号 | 0-8194-3008-0 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/13885]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Yang GW,Xu ZT,Xu JY,et al. Growth and fabrication of high performance 980nm strained InGaAs quantum well lasers using novel hybrid material system of InGaAsP and AlGaAs[C]. 见:semiconductor lasers iii. beijing, peoples r china. sep 16-18, 1998. |
入库方式： OAI收割
来源：半导体研究所
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