中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
The study of single mode 650nm AlGaInP quantum well laser diodes for DVD

文献类型:会议论文

作者Ma XY ; Cao Q ; Wang ST ; Guo L ; Wang LM ; Yang YL ; Zhang HQ ; Zhang XY ; Chen LH
出版日期1998
会议名称semiconductor lasers iii
会议日期sep 16-18, 1998
会议地点beijing, peoples r china
关键词AlGaInP quantum well laser diode MOCVD DVD
页码127-129
通讯作者ma xy chinese acad sci inst semicond pob 912 beijing 100083 peoples r china.
中文摘要single mode 650nm algainp quantum well laser diodes grown by low pressure metal organic chemical vapor deposition (lp-mocvd) was reported in this paper. selected buried rigewaveguid were applied for single mode operation especially for dvd use. the operating temperature over 90 degree at cw output power 5 mw was achieved.
英文摘要single mode 650nm algainp quantum well laser diodes grown by low pressure metal organic chemical vapor deposition (lp-mocvd) was reported in this paper. selected buried rigewaveguid were applied for single mode operation especially for dvd use. the operating temperature over 90 degree at cw output power 5 mw was achieved.; 于2010-10-29批量导入; made available in dspace on 2010-10-29t06:37:22z (gmt). no. of bitstreams: 1 3047.pdf: 163331 bytes, checksum: 1374cdd92ac0eea14a448c887045fd79 (md5) previous issue date: 1998; spie.; cos.; coema.; chinese acad sci, inst semicond, beijing 100083, peoples r china
收录类别CPCI-S
会议主办者spie.; cos.; coema.
会议录semiconductor lasers iii, 3547
会议录出版者spie-int soc optical engineering ; 1000 20th st, po box 10, bellingham, wa 98227-0010 usa
学科主题半导体物理
会议录出版地1000 20th st, po box 10, bellingham, wa 98227-0010 usa
语种英语
ISSN号0277-786x
ISBN号0-8194-3008-0
源URL[http://ir.semi.ac.cn/handle/172111/13889]  
专题半导体研究所_中国科学院半导体研究所(2009年前)
推荐引用方式
GB/T 7714
Ma XY,Cao Q,Wang ST,et al. The study of single mode 650nm AlGaInP quantum well laser diodes for DVD[C]. 见:semiconductor lasers iii. beijing, peoples r china. sep 16-18, 1998.

入库方式: OAI收割

来源:半导体研究所

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