Applications of dielectric thin film by electron cyclotron resonance plasma chemical vapor deposition for semiconductor photoelectronic devices
文献类型：会议论文
| 作者 | Mao DS ; Tan MQ ; Chen LH |
| 出版日期 | 1998 |
| 会议名称 | semiconductor lasers iii |
| 会议日期 | sep 16-18, 1998 |
| 会议地点 | beijing, peoples r china |
| 关键词 | ECR CVD thin film photoelectronic device |
| 页码 | 315-318 |
| 通讯作者 | mao ds chinese acad sci inst semicond pob 912 beijing 100083 peoples r china. |
| 中文摘要 | the paper reports a method of depositing sio2, sinx, a:si, si3n4 and sioxny dielectric thin films by electron cyclotron resonance plasma chemical vapor deposition (ecr cvd) on inp, ingaas and other compound semiconductor optoelectronic devices,and give a technology of depositing dielectric thin films and optical coatings by ecr cvd on laser's bars. the experiment results show the dielectric thin films and optical coatings are stable at thermomechanical property,optical properties and the other properties. in addition, the dielectric thin film deposition that there is low leakage current is reported for using as diffusion and ion implatation masks in the paper. in the finally, the dielectric film refractive index can be accurately controlled by the n-2/o-2/ar gas flow rate. |
| 英文摘要 | the paper reports a method of depositing sio2, sinx, a:si, si3n4 and sioxny dielectric thin films by electron cyclotron resonance plasma chemical vapor deposition (ecr cvd) on inp, ingaas and other compound semiconductor optoelectronic devices,and give a technology of depositing dielectric thin films and optical coatings by ecr cvd on laser's bars. the experiment results show the dielectric thin films and optical coatings are stable at thermomechanical property,optical properties and the other properties. in addition, the dielectric thin film deposition that there is low leakage current is reported for using as diffusion and ion implatation masks in the paper. in the finally, the dielectric film refractive index can be accurately controlled by the n-2/o-2/ar gas flow rate.; 于2010-10-29批量导入; made available in dspace on 2010-10-29t06:37:23z (gmt). no. of bitstreams: 1 3049.pdf: 141446 bytes, checksum: 7f735971b9f84f7c1d1c6c5c3546c3d3 (md5) previous issue date: 1998; spie.; cos.; coema.; chinese acad sci, inst semicond, beijing 100083, peoples r china |
| 收录类别 | CPCI-S |
| 会议主办者 | spie.; cos.; coema. |
| 会议录 | semiconductor lasers iii, 3547
 |
| 会议录出版者 | spie-int soc optical engineering ; 1000 20th st, po box 10, bellingham, wa 98227-0010 usa |
| 学科主题 | 半导体物理 |
| 会议录出版地 | 1000 20th st, po box 10, bellingham, wa 98227-0010 usa |
| 语种 | 英语 |
| ISSN号 | 0277-786x |
| ISBN号 | 0-8194-3008-0 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/13893]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Mao DS,Tan MQ,Chen LH. Applications of dielectric thin film by electron cyclotron resonance plasma chemical vapor deposition for semiconductor photoelectronic devices[C]. 见:semiconductor lasers iii. beijing, peoples r china. sep 16-18, 1998. |
入库方式： OAI收割
来源：半导体研究所
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