Structural and optical properties of GaAsSb/GaAs heterostructure quantum wells
文献类型：会议论文
| 作者 | Zhang YH ; Jiang DS
|
| 出版日期 | 2004 |
| 会议名称 | international conference on materials for advanced technologies |
| 会议日期 | dec 07-12, 2003 |
| 会议地点 | singapore, singapore |
| 关键词 | molecular beam epitaxy quantum wells GaAsSb/GaAs GAAS LASERS GAIN |
| 页码 | 336-341 |
| 通讯作者 | jiang ds cas inst semicond sklsm beijing 100083 peoples r china. 电子邮箱地址: dsjiang@red.semi.ac.cn |
| 中文摘要 | the structural and optical properties of mbe-grown gaassb/gaas multiple quantum wells (mqws) as well as strain-compensated gaassb/gaas/gaasp mqws are investigated. the results of double crystal x-ray diffraction and reciprocal space mapping show that when strain-compensated layers are introduced, the interface quality of qw structure is remarkably improved, and the mqw structure containing gaassb layers with a high sb composition can be coherently grown. due to the influence of inserted gaasp layers on the energy band and carrier distribution of qws, the optical properties of gaassb/gaas/gaasp mqws display a lot of features mainly characteristic of type-i qws despite the type-ii gaassb/gaas interfaces exist in the structure. (c) 2004 elsevier b.v. all rights reserved. |
| 英文摘要 | the structural and optical properties of mbe-grown gaassb/gaas multiple quantum wells (mqws) as well as strain-compensated gaassb/gaas/gaasp mqws are investigated. the results of double crystal x-ray diffraction and reciprocal space mapping show that when strain-compensated layers are introduced, the interface quality of qw structure is remarkably improved, and the mqw structure containing gaassb layers with a high sb composition can be coherently grown. due to the influence of inserted gaasp layers on the energy band and carrier distribution of qws, the optical properties of gaassb/gaas/gaasp mqws display a lot of features mainly characteristic of type-i qws despite the type-ii gaassb/gaas interfaces exist in the structure. (c) 2004 elsevier b.v. all rights reserved.; 于2010-11-15批量导入; zhangdi于2010-11-15 17:02:02导入数据到semi-ir的ir; made available in dspace on 2010-11-15t09:02:02z (gmt). no. of bitstreams: 1 2781.pdf: 366176 bytes, checksum: 1bb51efb7c9c506681d078f7ba403366 (md5) previous issue date: 2004; cas, inst semicond, sklsm, beijing 100083, peoples r china; arizona state univ, csser, tempe, az 85287 usa; arizona state univ, dept elect engn, tempe, az 85287 usa |
| 收录类别 | CPCI-S |
| 会议录 | journal of crystal growth, 268 (3-4)
 |
| 会议录出版者 | elsevier science bv ; po box 211, 1000 ae amsterdam, netherlands |
| 学科主题 | 半导体物理 |
| 会议录出版地 | po box 211, 1000 ae amsterdam, netherlands |
| 语种 | 英语 |
| ISSN号 | 0022-0248 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/14827]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Zhang YH,Jiang DS. Structural and optical properties of GaAsSb/GaAs heterostructure quantum wells[C]. 见:international conference on materials for advanced technologies. singapore, singapore. dec 07-12, 2003. |
入库方式： OAI收割
来源：半导体研究所
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