The diphasic nc-Si/a-Si : H thin film with improved medium-range order
文献类型：会议论文
| 作者 | Zhang S ; Liao X ; Xu Y ; Martins R ; Fortunato E ; Kong G |
| 出版日期 | 2004 |
| 会议名称 | 20th international conference on amorphous and microcrystalline semiconductors |
| 会议日期 | aug 25-29, 2003 |
| 会议地点 | campos do jordao, brazil |
| 关键词 | AMORPHOUS-SILICON FILMS SCATTERING ABSORPTION DENSITIES HYDROGEN |
| 页码 | 188-191 |
| 通讯作者 | zhang s chinese acad sci inst semicond state key lab surface phys beijing 100083 peoples r china. 电子邮箱地址: sz@uninova.pt |
| 中文摘要 | a series of silicon film samples were prepared by plasma enhanced chemical vapor deposition (pecvd) near the threshold from amorphous to nanocrystalline state by adjusting the plasma parameters and properly increasing the reactions between the hydrogen plasma and the growing surface. the microstucture of the films was studied by micro-raman and fourier transform infrared (ftir) spectroscopy. the influences of the hydrogen dilution ratio of silane (r-h = [h-2]/[sih4]) and the substrate temperature (t-s) on the microstructural and photoelectronic properties of silicon films were investigated in detail. with the increase of rh from 10 to 100, a notable improvement in the medium-range order (mro) of the films was observed, and then the phase transition from amorphous to nanocrystalline phase occurred, which lead to the formation of diatomic hydrogen complex, h-2* and their congeries. with the increase of t-s from 150 to 275 degreesc, both the short-range order and the medium range order of the silicon films are obviously improved. the photoconductivity spectra and the light induced changes of the films show that the diphasic nc-si/a-si:h films with fine medium-range order present a broader light spectral response range in the longer wavelength and a lower degradation upon illumination than conventional a-si:h films. (c) 2004 elsevier b.v. all rights reserved. |
| 英文摘要 | a series of silicon film samples were prepared by plasma enhanced chemical vapor deposition (pecvd) near the threshold from amorphous to nanocrystalline state by adjusting the plasma parameters and properly increasing the reactions between the hydrogen plasma and the growing surface. the microstucture of the films was studied by micro-raman and fourier transform infrared (ftir) spectroscopy. the influences of the hydrogen dilution ratio of silane (r-h = [h-2]/[sih4]) and the substrate temperature (t-s) on the microstructural and photoelectronic properties of silicon films were investigated in detail. with the increase of rh from 10 to 100, a notable improvement in the medium-range order (mro) of the films was observed, and then the phase transition from amorphous to nanocrystalline phase occurred, which lead to the formation of diatomic hydrogen complex, h-2* and their congeries. with the increase of t-s from 150 to 275 degreesc, both the short-range order and the medium range order of the silicon films are obviously improved. the photoconductivity spectra and the light induced changes of the films show that the diphasic nc-si/a-si:h films with fine medium-range order present a broader light spectral response range in the longer wavelength and a lower degradation upon illumination than conventional a-si:h films. (c) 2004 elsevier b.v. all rights reserved.; 于2010-11-15批量导入; zhangdi于2010-11-15 17:02:03导入数据到semi-ir的ir; made available in dspace on 2010-11-15t09:02:03z (gmt). no. of bitstreams: 1 2785.pdf: 496229 bytes, checksum: 2171db73807975dadd3f95c8d92e70b7 (md5) previous issue date: 2004; chinese acad sci, inst semicond, state key lab surface phys, beijing 100083, peoples r china; chinese acad sci, ctr condensed mater phys, beijing 100083, peoples r china; new univ lisbon, dept mat sci, fac sci & technol, p-2829516 caparica, portugal; nova univ, cemop, p-2829516 caparica, portugal |
| 收录类别 | CPCI-S |
| 会议录 | journal of non-crystalline solids, 338
 |
| 会议录出版者 | elsevier science bv ; po box 211, 1000 ae amsterdam, netherlands |
| 学科主题 | 半导体材料 |
| 会议录出版地 | po box 211, 1000 ae amsterdam, netherlands |
| 语种 | 英语 |
| ISSN号 | 0022-3093 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/14833]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Zhang S,Liao X,Xu Y,et al. The diphasic nc-Si/a-Si : H thin film with improved medium-range order[C]. 见:20th international conference on amorphous and microcrystalline semiconductors. campos do jordao, brazil. aug 25-29, 2003. |
入库方式： OAI收割
来源：半导体研究所
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