Controllable growth of semiconductor nanometer structures
文献类型：会议论文
| 作者 | Wang ZG ; Wu J |
| 出版日期 | 2003 |
| 会议名称 | conference on low dimensional structures and devices (ldsd) |
| 会议日期 | dec 08-13, 2002 |
| 会议地点 | fortaleza, brazil |
| 关键词 | INAS QUANTUM DOTS SELF-ORGANIZATION MONOLAYER COVERAGE DENSITY GAAS ISLANDS INP(001) EPITAXY |
| 页码 | 379-382 |
| 通讯作者 | wang zg chinese acad sci inst semicond key lab semicond mat sci pob 912 beijing 100083 peoples r china. |
| 中文摘要 | self-assembled quantum dots and wires were obtained in the inxga1-xas/gaas and inas/in0.52al0.48as/inp systems, respectively, using molecular beam epitaxy (mbe). uniformity in the distribution, density, and spatial ordering of the nanostructures can be controlled to some extent by adjusting and optimizing the mbe growth parameters. in addition, some interesting observation on the inas wire alignment on inp(001) is discussed. (c) 2003 elsevier science ltd. all rights reserved. |
| 英文摘要 | self-assembled quantum dots and wires were obtained in the inxga1-xas/gaas and inas/in0.52al0.48as/inp systems, respectively, using molecular beam epitaxy (mbe). uniformity in the distribution, density, and spatial ordering of the nanostructures can be controlled to some extent by adjusting and optimizing the mbe growth parameters. in addition, some interesting observation on the inas wire alignment on inp(001) is discussed. (c) 2003 elsevier science ltd. all rights reserved.; 于2010-11-15批量导入; zhangdi于2010-11-15 17:02:04导入数据到semi-ir的ir; made available in dspace on 2010-11-15t09:02:04z (gmt). no. of bitstreams: 1 2814.pdf: 255033 bytes, checksum: b1ac0cc92399d2a8944f665e4804aa61 (md5) previous issue date: 2003; chinese acad sci, inst semicond, key lab semicond mat sci, beijing 100083, peoples r china |
| 收录类别 | CPCI-S |
| 会议录 | microelectronics journal, 34 (5-8)
 |
| 会议录出版者 | elsevier advanced technology ; oxford fulfillment centre the boulevard, langford lane, kidlington, oxford ox5 1gb, oxon, england |
| 学科主题 | 半导体材料 |
| 会议录出版地 | oxford fulfillment centre the boulevard, langford lane, kidlington, oxford ox5 1gb, oxon, england |
| 语种 | 英语 |
| ISSN号 | 0026-2692 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/14839]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Wang ZG,Wu J. Controllable growth of semiconductor nanometer structures[C]. 见:conference on low dimensional structures and devices (ldsd). fortaleza, brazil. dec 08-13, 2002. |
入库方式： OAI收割
来源：半导体研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。