中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Surface morphology and optical property of 1.3 mu m In0.5Ga0.5As/GaAs self-organized quantum dots grown by MBE

文献类型:会议论文

作者Lan Q ; Niu ZC ; Zhou DY ; Kong YC ; Wang XD ; Miao ZH ; Feng SL
出版日期2003
会议名称international conference on superlattices nano-structures and nano-devices (icsnn-02)
会议日期jul 22-26, 2002
会议地点toulouse, france
页码114-116
通讯作者niu zc chinese acad sci natl lab superlattices inst semicond beijing 100083 peoples r china.
中文摘要surface morphology and optical properties of 1.3 mum self-organized ingaas/gaas quantum dots structure grown by molecular beam epitaxy have been investigated by atomic force microscopy and photoluminescence measurements. it has been shown that the surface morphology evolution and emission wavelengths of ingaas/gaas qds can be controlled effectively via cycled monolayer deposition methods due to the reduction of the surface strain. our results provide important information for optimizing the epitaxial parameters for obtaining 1.3 mum long wavelength emission quantum dots structures. (c) 2002 elsevier science b.v. all rights reserved.
英文摘要surface morphology and optical properties of 1.3 mum self-organized ingaas/gaas quantum dots structure grown by molecular beam epitaxy have been investigated by atomic force microscopy and photoluminescence measurements. it has been shown that the surface morphology evolution and emission wavelengths of ingaas/gaas qds can be controlled effectively via cycled monolayer deposition methods due to the reduction of the surface strain. our results provide important information for optimizing the epitaxial parameters for obtaining 1.3 mum long wavelength emission quantum dots structures. (c) 2002 elsevier science b.v. all rights reserved.; 于2010-11-15批量导入; zhangdi于2010-11-15 17:02:04导入数据到semi-ir的ir; made available in dspace on 2010-11-15t09:02:04z (gmt). no. of bitstreams: 1 2816.pdf: 258620 bytes, checksum: 42655e86d1c86ce13840fc865b9bf56b (md5) previous issue date: 2003; chinese acad sci, natl lab superlattices, inst semicond, beijing 100083, peoples r china
收录类别CPCI-S
会议录physica e-low-dimensional systems & nanostructures, 17 (1-4)
会议录出版者elsevier science bv ; po box 211, 1000 ae amsterdam, netherlands
学科主题半导体物理
会议录出版地po box 211, 1000 ae amsterdam, netherlands
语种英语
ISSN号1386-9477
源URL[http://ir.semi.ac.cn/handle/172111/14843]  
专题半导体研究所_中国科学院半导体研究所(2009年前)
推荐引用方式
GB/T 7714
Lan Q,Niu ZC,Zhou DY,et al. Surface morphology and optical property of 1.3 mu m In0.5Ga0.5As/GaAs self-organized quantum dots grown by MBE[C]. 见:international conference on superlattices nano-structures and nano-devices (icsnn-02). toulouse, france. jul 22-26, 2002.

入库方式: OAI收割

来源:半导体研究所

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