Effects and numerical analysis of argon gas flow on the oxygen concentration in Czochralski silicon single crystal growth
文献类型：会议论文
| 作者 | Zhang ZC ; Ren BY ; Chen YH ; Yang SY ; Wang ZG |
| 出版日期 | 2003 |
| 会议名称 | iumrs/icem 2002 conference |
| 会议日期 | jun 10-14, 2002 |
| 会议地点 | xian, peoples r china |
| 关键词 | Czochralski method growth from melt semiconductor silicon argon gas flow computer simulation oxygen content FURNACE PRESSURE |
| 页码 | 504-509 |
| 通讯作者 | zhang zc chinese acad sci inst semicond lab semicond mat sci beijing 100083 peoples r china. |
| 中文摘要 | argon gas, as a protective environment and carrier of latent heat, has an important effect on the temperature distribution in crystals and melts. numeric simulation is a potent tool for solving engineering problems. in this paper, the relationship between argon gas flow and oxygen concentration in silicon crystals was studied systematically. a flowing stream of argon gas is described by numeric simulation for the first time. therefore, the results of experiments can be explained, and the optimum argon flow with the lowest oxygen concentration can be achieved. (c) 2002 elsevier science b.v. all rights reserved. |
| 英文摘要 | argon gas, as a protective environment and carrier of latent heat, has an important effect on the temperature distribution in crystals and melts. numeric simulation is a potent tool for solving engineering problems. in this paper, the relationship between argon gas flow and oxygen concentration in silicon crystals was studied systematically. a flowing stream of argon gas is described by numeric simulation for the first time. therefore, the results of experiments can be explained, and the optimum argon flow with the lowest oxygen concentration can be achieved. (c) 2002 elsevier science b.v. all rights reserved.; 于2010-11-15批量导入; zhangdi于2010-11-15 17:02:06导入数据到semi-ir的ir; made available in dspace on 2010-11-15t09:02:06z (gmt). no. of bitstreams: 1 2821.pdf: 398995 bytes, checksum: 4ae3229849634c06e4f524294a925cf0 (md5) previous issue date: 2003; chinese mat res soc.; int union mat res soc.; chinese acad sci, inst semicond, lab semicond mat sci, beijing 100083, peoples r china; hebei univ technol, inst semicond, tianjin 300130, peoples r china |
| 收录类别 | CPCI-S |
| 会议主办者 | chinese mat res soc.; int union mat res soc. |
| 会议录 | microelectronic engineering, 66 (1-4)
 |
| 会议录出版者 | elsevier science bv ; po box 211, 1000 ae amsterdam, netherlands |
| 学科主题 | 半导体材料 |
| 会议录出版地 | po box 211, 1000 ae amsterdam, netherlands |
| 语种 | 英语 |
| ISSN号 | 0167-9317 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/14853]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Zhang ZC,Ren BY,Chen YH,et al. Effects and numerical analysis of argon gas flow on the oxygen concentration in Czochralski silicon single crystal growth[C]. 见:iumrs/icem 2002 conference. xian, peoples r china. jun 10-14, 2002. |
入库方式： OAI收割
来源：半导体研究所
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