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| 作者 | Chen CY
; Chen WD
; Song SF
; Hsu CC
|
| 出版日期 | 2002
|
| 会议名称 | symposium on silicon-based heterostructure materials held at the 8th iumrs international conference on electronic materials (iumrs-icem2002)
|
| 会议日期 | jun 10-14, 2002
|
| 会议地点 | xian, peoples r china
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| 关键词 | HYDROGENATED AMORPHOUS-SILICON
PHOTOLUMINESCENCE
LUMINESCENCE
INTENSITY
SYSTEM
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| 页码 | 4246-4249
|
| 通讯作者 | chen cy chinese acad sci inst semicond beijing 100083 peoples r china.
|
| 中文摘要 | photoluminescence (pl) from er-implanted hydrogenated amorphous silicon suboxide (a-siox:h(x<2.0)) films was measured. two luminescence bands with maxima at lambda congruent to 750 nm and lambda congruent to 1.54mum, ascribed to the a-siox:h intrinsic emission and er3+ emission, were observed. peak intensities of the two bands follow the same trend as a function of annealing temperature from 300 to 1000degreesc. micro-raman results indicate that the a-siox:h films are a mixture of two phases, an amorphous siox matrix and amorphous silicon (a-si) domains embedded there in. ftir spectra confirm that hydrogen effusion from a-siox:h films occurs during annealing. hydrogen effusion leads to a reconstruction of the microstructure of a-si domains, thus having a strong influence on er3+ emission. our study emphasizes the role of a-si domains on er3+ emission in a-siox:h films. |
| 英文摘要 | photoluminescence (pl) from er-implanted hydrogenated amorphous silicon suboxide (a-siox:h(x<2.0)) films was measured. two luminescence bands with maxima at lambda congruent to 750 nm and lambda congruent to 1.54mum, ascribed to the a-siox:h intrinsic emission and er3+ emission, were observed. peak intensities of the two bands follow the same trend as a function of annealing temperature from 300 to 1000degreesc. micro-raman results indicate that the a-siox:h films are a mixture of two phases, an amorphous siox matrix and amorphous silicon (a-si) domains embedded there in. ftir spectra confirm that hydrogen effusion from a-siox:h films occurs during annealing. hydrogen effusion leads to a reconstruction of the microstructure of a-si domains, thus having a strong influence on er3+ emission. our study emphasizes the role of a-si domains on er3+ emission in a-siox:h films.; 于2010-11-15批量导入; zhangdi于2010-11-15 17:02:08导入数据到semi-ir的ir; made available in dspace on 2010-11-15t09:02:08z (gmt). no. of bitstreams: 1
2829.pdf: 744167 bytes, checksum: 89cbd356eb995a3d9cb7a7b3fd727f32 (md5)
previous issue date: 2002; chinese mat res soc.; minist sci & technol china.; natl nat sci fdn china.; china assoc sci & technol.; chinese acad sci.; chinese acad engn.; govt shaanxi province & xian city.; china electr mat assoc.; chinese acad sci, inst semicond, beijing 100083, peoples r china |
| 收录类别 | CPCI-S
|
| 会议主办者 | chinese mat res soc.; minist sci & technol china.; natl nat sci fdn china.; china assoc sci & technol.; chinese acad sci.; chinese acad engn.; govt shaanxi province & xian city.; china electr mat assoc.
|
| 会议录 | international journal of modern physics b, 16 (28-29)
 |
| 会议录出版者 | world scientific publ co pte ltd
; journal dept po box 128 farrer road, singapore 912805, singapore
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| 学科主题 | 半导体材料
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| 会议录出版地 | journal dept po box 128 farrer road, singapore 912805, singapore
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| 语种 | 英语
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| ISSN号 | 0217-9792
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| 源URL | [http://ir.semi.ac.cn/handle/172111/14869]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前）
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推荐引用方式
GB/T 7714 |
Chen CY,Chen WD,Song SF,et al. Correlation between Er3+ emission and the microstructure of a-SiOx : H < Er > films[C]. 见:symposium on silicon-based heterostructure materials held at the 8th iumrs international conference on electronic materials (iumrs-icem2002). xian, peoples r china. jun 10-14, 2002.
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