Studies of 6H-SiC devices
文献类型：会议论文
| 作者 | Wang SR ; Liu ZL |
| 出版日期 | 2002 |
| 会议名称 | korea-china joint symposium on smiconductor physics and device applications |
| 会议日期 | dec 05-09, 2001 |
| 会议地点 | seoul, south korea |
| 关键词 | SiC Schottky pn junction diodes MOS capacitor JUNCTION DIODES |
| 页码 | 393-399 |
| 通讯作者 | wang sr chinese acad sci inst semicond beijing 100083 peoples r china. |
| 中文摘要 | silicon carbide (sic) is recently receiving increased attention due to its unique electrical and thermal properties. it has been regarded as the most appropriate semiconductor material for high power, high frequency, high temperature, and radiation hard microelectronic devices. the fabrication processes and characterization of basic device on 6h-sic were systematically studied. the main works are summarized as follows:the homoepitaxial growth on the commercially available single-crystal 6h-sic wafers was performed in a modified gas source molecular beam epitaxy system. the mesa structured p(+)n junction diodes on the material were fabricated and characterized. the diodes showed a high breakdown voltage of 800 v at room temperature. they operated with good rectification characteristics from room temperature to 673 k.using thermal evaporation, ti/6h-sic schottky barrier diodes were fabricated. they showed good rectification characteristics from room temperature to 473 k. using neon implantation to form the edge termination, the breakdown voltage was improved to be 800 v.n-type 6h-sic mos capacitors were fabricated and characterized. under the same growing conditions, the quality of polysilicon gate capacitors was better than al. in addition, sic mos capacitors had good tolerance to gamma rays. (c) 2002 published by elsevier science b.v. |
| 英文摘要 | silicon carbide (sic) is recently receiving increased attention due to its unique electrical and thermal properties. it has been regarded as the most appropriate semiconductor material for high power, high frequency, high temperature, and radiation hard microelectronic devices. the fabrication processes and characterization of basic device on 6h-sic were systematically studied. the main works are summarized as follows:the homoepitaxial growth on the commercially available single-crystal 6h-sic wafers was performed in a modified gas source molecular beam epitaxy system. the mesa structured p(+)n junction diodes on the material were fabricated and characterized. the diodes showed a high breakdown voltage of 800 v at room temperature. they operated with good rectification characteristics from room temperature to 673 k.using thermal evaporation, ti/6h-sic schottky barrier diodes were fabricated. they showed good rectification characteristics from room temperature to 473 k. using neon implantation to form the edge termination, the breakdown voltage was improved to be 800 v.n-type 6h-sic mos capacitors were fabricated and characterized. under the same growing conditions, the quality of polysilicon gate capacitors was better than al. in addition, sic mos capacitors had good tolerance to gamma rays. (c) 2002 published by elsevier science b.v.; 于2010-11-15批量导入; zhangdi于2010-11-15 17:02:10导入数据到semi-ir的ir; made available in dspace on 2010-11-15t09:02:10z (gmt). no. of bitstreams: 0 previous issue date: 2002; 会议主办方: dongguk univ; chinese acad sci, inst semicond, beijing 100083, peoples r china |
| 收录类别 | CPCI-S |
| 会议主办者 | 会议主办方: dongguk univ |
| 会议录 | current applied physics, 2 (5)
 |
| 会议录出版者 | elsevier science bv ; po box 211, 1000 ae amsterdam, netherlands |
| 学科主题 | 半导体器件 |
| 会议录出版地 | po box 211, 1000 ae amsterdam, netherlands |
| 语种 | 英语 |
| ISSN号 | 1567-1739 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/14881]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Wang SR,Liu ZL. Studies of 6H-SiC devices[C]. 见:korea-china joint symposium on smiconductor physics and device applications. seoul, south korea. dec 05-09, 2001. |
入库方式： OAI收割
来源：半导体研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。