Dielectric properties of Bi2Ti2O7 films grown on Si(100) substrate by APMOCVD
文献类型：会议论文
| 作者 | Wang H ; Shang SX ; Yao WF ; Hou Y ; Xu XH ; Wang D ; Wang M ; Yu JZ |
| 出版日期 | 2002 |
| 会议名称 | 10th international meeting on ferroelectricity (imf-10) |
| 会议日期 | sep 03-07, 2001 |
| 会议地点 | madrid, spain |
| 关键词 | Bi2Ti2O7 thin film MOCVD (111) orientation CHEMICAL-VAPOR-DEPOSITION CRYSTAL THIN-FILMS |
| 页码 | 1707-1713 |
| 通讯作者 | wang h shandong univ state key lab crystal mat jinan 250100 peoples r china. |
| 中文摘要 | the growth of bi2ti2o7 films with (111) orientation on si(100) substrate by atmospheric pressure metal-organic chemical vapor deposition(apmocvd) technique at 480similar to550 degreesc is presented. the films were characterized by x-ray diffraction analysis, atomic force microscopy and electron diffraction. the results show high quality bi2ti2o7 films with smooth shinning surface. the dielectric properties and c-v characterization of the films were studied. the dielectric constant (epsilon) and loss tangent (tgdelta) were found to be 180 and 0.01 respectively. the charge storage density was 31.9fc/mum(2). the resistivity is higher than 1x10(12) omega. .cm under the applied voltage of 5v. the bi2ti2o7 films are suitable to be used as a new insulating gate material in dynamic random access memory (dram). |
| 英文摘要 | the growth of bi2ti2o7 films with (111) orientation on si(100) substrate by atmospheric pressure metal-organic chemical vapor deposition(apmocvd) technique at 480similar to550 degreesc is presented. the films were characterized by x-ray diffraction analysis, atomic force microscopy and electron diffraction. the results show high quality bi2ti2o7 films with smooth shinning surface. the dielectric properties and c-v characterization of the films were studied. the dielectric constant (epsilon) and loss tangent (tgdelta) were found to be 180 and 0.01 respectively. the charge storage density was 31.9fc/mum(2). the resistivity is higher than 1x10(12) omega. .cm under the applied voltage of 5v. the bi2ti2o7 films are suitable to be used as a new insulating gate material in dynamic random access memory (dram).; 于2010-11-15批量导入; zhangdi于2010-11-15 17:02:11导入数据到semi-ir的ir; made available in dspace on 2010-11-15t09:02:11z (gmt). no. of bitstreams: 1 2870.pdf: 1680298 bytes, checksum: 5fc9e63da7813cbf8925f3386f78c97d (md5) previous issue date: 2002; shandong univ, state key lab crystal mat, jinan 250100, peoples r china; shandong univ, dept environm engn, jinan 250100, peoples r china; chinese acad sci, inst semicond, state key lab integrated optoelect, beijing 100083, peoples r china |
| 收录类别 | CPCI-S |
| 会议录 | ferroelectrics, 271
 |
| 会议录出版者 | taylor & francis ltd ; 4 park square, milton park, abingdon ox14 4rn, oxon, england |
| 学科主题 | 光电子学 |
| 会议录出版地 | 4 park square, milton park, abingdon ox14 4rn, oxon, england |
| 语种 | 英语 |
| ISSN号 | 0015-0193 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/14891]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Wang H,Shang SX,Yao WF,et al. Dielectric properties of Bi2Ti2O7 films grown on Si(100) substrate by APMOCVD[C]. 见:10th international meeting on ferroelectricity (imf-10). madrid, spain. sep 03-07, 2001. |
入库方式： OAI收割
来源：半导体研究所
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