Space grown semi-insulating gallium arsenide single crystal and its application
文献类型：会议论文
| 作者 | Chen NF ; Zhong XR ; Zhang M ; Lin LY |
| 出版日期 | 2002 |
| 会议名称 | g0 1 symposium of cospar scientific commission g held at the 33rd cospar scientific assembly |
| 会议日期 | jul, 2000 |
| 会议地点 | warsaw, poland |
| 关键词 | SEMIINSULATING GAAS STOICHIOMETRY DEFECTS |
| 页码 | 537-540 |
| 通讯作者 | chen nf acad sinica inst semicond lab semicond mat sci pob 912 beijing 100083 peoples r china. |
| 中文摘要 | low noise field effect transistors and analogue switch integrated circuits (ics) have been fabricated in semi-insulating gallium arsenide (si-gaas) wafers grown in space by direct ion-implantation. the electrical behaviors of the devices and the ics have surpassed those fabricated in the terrestrially grown si-gaas wafers. the highest gain and the lowest noise of the transistors made from space-grown si-gaas wafers are 22.8 db and 0.78 db, respectively. the threshold back-gating voltage of the ics made from space-grown si-gaas wafers is better than 8.5 v the con-elation between the characterizations of materials and devices is studied systematically. (c) 2002 cospar. published by elsevier science ltd. all rights reserved. |
| 英文摘要 | low noise field effect transistors and analogue switch integrated circuits (ics) have been fabricated in semi-insulating gallium arsenide (si-gaas) wafers grown in space by direct ion-implantation. the electrical behaviors of the devices and the ics have surpassed those fabricated in the terrestrially grown si-gaas wafers. the highest gain and the lowest noise of the transistors made from space-grown si-gaas wafers are 22.8 db and 0.78 db, respectively. the threshold back-gating voltage of the ics made from space-grown si-gaas wafers is better than 8.5 v the con-elation between the characterizations of materials and devices is studied systematically. (c) 2002 cospar. published by elsevier science ltd. all rights reserved.; 于2010-11-15批量导入; zhangdi于2010-11-15 17:02:12导入数据到semi-ir的ir; made available in dspace on 2010-11-15t09:02:12z (gmt). no. of bitstreams: 1 2872.pdf: 366187 bytes, checksum: 3c253fcdba02e144d5ee9d16508d39c1 (md5) previous issue date: 2002; comm space res.; acad sinica, inst semicond, lab semicond mat sci, beijing 100083, peoples r china; hebei inst semicond, shijiazhuang 050002, hebei, peoples r china |
| 收录类别 | CPCI-S |
| 会议主办者 | comm space res. |
| 会议录 | impact of the gravity level on materials processing and fluid dynamics, 29 (4)
 |
| 会议录出版者 | pergamon-elsevier science ltd ; the boulevard, langford lane, kidlington, oxford ox5 1gb, england |
| 学科主题 | 半导体材料 |
| 会议录出版地 | the boulevard, langford lane, kidlington, oxford ox5 1gb, england |
| 语种 | 英语 |
| ISSN号 | 0273-1177 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/14895]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Chen NF,Zhong XR,Zhang M,et al. Space grown semi-insulating gallium arsenide single crystal and its application[C]. 见:g0 1 symposium of cospar scientific commission g held at the 33rd cospar scientific assembly. warsaw, poland. jul, 2000. |
入库方式： OAI收割
来源：半导体研究所
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