Detection of indium segregation effects in InGaAs/GaAs quantum wells using reflectance-difference spectrometry
文献类型：会议论文
| 作者 | Xu B ; Ye XL
|
| 出版日期 | 2002 |
| 会议名称 | 9th international conference on defects: recognition, imaging and physics in semiconductors (drip ix) |
| 会议日期 | sep 24-28, 2001 |
| 会议地点 | rimini, italy |
| 关键词 | reflectance-difference spectroscopy indium segregation InGaAs/GaAs quantum wells EPITAXY-GROWN INGAAS/GAAS SURFACE SEGREGATION INTERFACE |
| 页码 | 62-65 |
| 通讯作者 | chen yh chinese acad sci inst semicond lab semicond mat sci pob 912 beijing 100083 peoples r china. |
| 中文摘要 | the influence of the indium segregation on the interface asymmetry in ingaas/gaas quantum wells have been studied by reflectance-difference spectroscopy (rds). it is found that the anisotropy of the 2h1e (2hh --> 1e) transition is very sensitive to the degree of the interface asymmetry. calculations taking into account indium segregation yield good agreement with the observed anisotropy structures. it demonstrates that the anisotropy intensity ratio of the 1l1e (1lh --> 1e) and 2h1e transitions measured by rds can be used to characterize the interface asymmetry. (c) 2002 elsevier science b.v. all rights reserved. |
| 英文摘要 | the influence of the indium segregation on the interface asymmetry in ingaas/gaas quantum wells have been studied by reflectance-difference spectroscopy (rds). it is found that the anisotropy of the 2h1e (2hh --> 1e) transition is very sensitive to the degree of the interface asymmetry. calculations taking into account indium segregation yield good agreement with the observed anisotropy structures. it demonstrates that the anisotropy intensity ratio of the 1l1e (1lh --> 1e) and 2h1e transitions measured by rds can be used to characterize the interface asymmetry. (c) 2002 elsevier science b.v. all rights reserved.; 于2010-11-15批量导入; zhangdi于2010-11-15 17:02:12导入数据到semi-ir的ir; made available in dspace on 2010-11-15t09:02:12z (gmt). no. of bitstreams: 1 2873.pdf: 129007 bytes, checksum: c7776daebc5d00cc80b51b44568e2180 (md5) previous issue date: 2002; chinese acad sci, inst semicond, lab semicond mat sci, beijing 100083, peoples r china |
| 收录类别 | CPCI-S |
| 会议录 | materials science and engineering b-solid state materials for advanced technology, 91
 |
| 会议录出版者 | elsevier science sa ; po box 564, 1001 lausanne, switzerland |
| 学科主题 | 半导体材料 |
| 会议录出版地 | po box 564, 1001 lausanne, switzerland |
| 语种 | 英语 |
| ISSN号 | 0921-5107 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/14897]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Xu B,Ye XL. Detection of indium segregation effects in InGaAs/GaAs quantum wells using reflectance-difference spectrometry[C]. 见:9th international conference on defects: recognition, imaging and physics in semiconductors (drip ix). rimini, italy. sep 24-28, 2001. |
入库方式： OAI收割
来源：半导体研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。