Characterization of defects and whole wafer uniformity of annealed undoped semi-insulating InP wafers
文献类型：会议论文
| 作者 | Zhao YW ; Sun NF ; Dong HW ; Jiao JH ; Zhao JQ ; Sun TN ; Lin LY |
| 出版日期 | 2002 |
| 会议名称 | 9th international conference on defects: recognition, imaging and physics in semiconductors (drip ix) |
| 会议日期 | sep 24-28, 2001 |
| 会议地点 | rimini, italy |
| 关键词 | indium phosphide semi-insulating annealing PICTS photoluminescence SEMIINSULATING INP INDIUM-PHOSPHIDE FE PHOTOLUMINESCENCE TEMPERATURE |
| 页码 | 521-524 |
| 通讯作者 | sun nf hebei semicond res inst pob 179-40 shijiazhuang 050002 hebei peoples r china. |
| 中文摘要 | semi-insulating (si) inp wafers of 2 and 3 in. diameters have been prepared by annealing undoped lec inp at 930 degreesc for 80 h under pure phosphorus ambient (pp) and iron phosphide ambient (ip). the electrical uniformity of annealed undoped si wafers, along with a fe-doped as-grown si lec inp wafer, has been characterized by whole wafer pl mapping and radial hall measurements. defects in these wafers have been detected by photo-induced current transient spectroscopy (picts). the results indicated that the uniformity of ip wafer is much better than that of pp wafer and as-grown fe-doped si inp wafer. there are fewer traps in undoped si inp ip wafer than in as grown fe-doped and undoped si inp pp wafer, as evidenced by picts. the good uniformity of the ip wafer is related to the nonexistence of high concentration of thermally induced defects. the mechanism for this phenomenon is discussed based on the results. (c) 2002 elsevier science b.v. all rights reserved. |
| 英文摘要 | semi-insulating (si) inp wafers of 2 and 3 in. diameters have been prepared by annealing undoped lec inp at 930 degreesc for 80 h under pure phosphorus ambient (pp) and iron phosphide ambient (ip). the electrical uniformity of annealed undoped si wafers, along with a fe-doped as-grown si lec inp wafer, has been characterized by whole wafer pl mapping and radial hall measurements. defects in these wafers have been detected by photo-induced current transient spectroscopy (picts). the results indicated that the uniformity of ip wafer is much better than that of pp wafer and as-grown fe-doped si inp wafer. there are fewer traps in undoped si inp ip wafer than in as grown fe-doped and undoped si inp pp wafer, as evidenced by picts. the good uniformity of the ip wafer is related to the nonexistence of high concentration of thermally induced defects. the mechanism for this phenomenon is discussed based on the results. (c) 2002 elsevier science b.v. all rights reserved.; 于2010-11-15批量导入; zhangdi于2010-11-15 17:02:13导入数据到semi-ir的ir; made available in dspace on 2010-11-15t09:02:13z (gmt). no. of bitstreams: 1 2875.pdf: 183847 bytes, checksum: cd02b7f055137c68c6bdf0f2a5f3ff35 (md5) previous issue date: 2002; hebei semicond res inst, shijiazhuang 050002, hebei, peoples r china; chinese acad sci, inst semicond, ctr mat sci, beijing 100083, peoples r china; chinese acad sci, inst semicond, mat sci lab, beijing 100083, peoples r china |
| 收录类别 | CPCI-S |
| 会议录 | materials science and engineering b-solid state materials for advanced technology, 91
 |
| 会议录出版者 | elsevier science sa ; po box 564, 1001 lausanne, switzerland |
| 学科主题 | 半导体材料 |
| 会议录出版地 | po box 564, 1001 lausanne, switzerland |
| 语种 | 英语 |
| ISSN号 | 0921-5107 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/14901]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Zhao YW,Sun NF,Dong HW,et al. Characterization of defects and whole wafer uniformity of annealed undoped semi-insulating InP wafers[C]. 见:9th international conference on defects: recognition, imaging and physics in semiconductors (drip ix). rimini, italy. sep 24-28, 2001. |
入库方式： OAI收割
来源：半导体研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。