Structural evaluation of polycrystalline silicon thin films by hot-wire-assisted PECVD
文献类型：会议论文
| 作者 | Feng Y ; Zhu M ; Liu F ; Liu J ; Han H ; Han Y |
| 出版日期 | 2001 |
| 会议名称 | 1st international conference on cat-cvd (hot wire cvd) process |
| 会议日期 | nov 14-17, 2000 |
| 会议地点 | kanazawa, japan |
| 关键词 | poly-Si structure hot-wire plasma-enhanced chemical vapor deposition (PECVD) CHEMICAL-VAPOR-DEPOSITION MICROCRYSTALLINE SILICON HYDROGEN |
| 页码 | 213-216 |
| 通讯作者 | zhu m chinese acad sci grad sch dept phys pob 3908 beijing 100039 peoples r china. |
| 中文摘要 | tungsten wires were introduced into a plasma-enhanced chemical vapor deposition (pecvd) system as a catalyzer: we name this technique 'hot-wire-assisted pecvd' (hw-pecvd). under constant deposition pressure (p(g)), gas flow ratio and catalyzer position, the effects of the hot wire temperature (t-f) on the structural properties of the poly-si films have been characterized by x-ray diffraction (xrd), raman scattering and fourier-transform infrared (ftir) spectroscopy. compared with conventional pecvd, the grain size, crystalline volume fraction (x-e) and deposition rate were all enhanced when a high t-f was used. the best poly-si film exhibits a preferential (220) orientation, with a full width at half-maximum (fwhm) of 0.2 degrees. the si-si to peak of the raman scattering spectrum is located at 519.8 cm(-1) with a fwhm of 7.1 cm(-1). the x-c is 0.93. these improvements are mainly the result of promotion of the dissociation of sih4 and an increase in the atomic h concentration in the gas phase. (c) 2001 elsevier science b.v. all rights reserved. |
| 英文摘要 | tungsten wires were introduced into a plasma-enhanced chemical vapor deposition (pecvd) system as a catalyzer: we name this technique 'hot-wire-assisted pecvd' (hw-pecvd). under constant deposition pressure (p(g)), gas flow ratio and catalyzer position, the effects of the hot wire temperature (t-f) on the structural properties of the poly-si films have been characterized by x-ray diffraction (xrd), raman scattering and fourier-transform infrared (ftir) spectroscopy. compared with conventional pecvd, the grain size, crystalline volume fraction (x-e) and deposition rate were all enhanced when a high t-f was used. the best poly-si film exhibits a preferential (220) orientation, with a full width at half-maximum (fwhm) of 0.2 degrees. the si-si to peak of the raman scattering spectrum is located at 519.8 cm(-1) with a fwhm of 7.1 cm(-1). the x-c is 0.93. these improvements are mainly the result of promotion of the dissociation of sih4 and an increase in the atomic h concentration in the gas phase. (c) 2001 elsevier science b.v. all rights reserved.; 于2010-11-15批量导入; zhangdi于2010-11-15 17:02:16导入数据到semi-ir的ir; made available in dspace on 2010-11-15t09:02:16z (gmt). no. of bitstreams: 1 2906.pdf: 103467 bytes, checksum: 15ab19d28632ec18e8b3b9f573e4abb6 (md5) previous issue date: 2001; chinese acad sci, grad sch, dept phys, beijing 100039, peoples r china; chinese acad sci, lab semicond mat sci, beijing 100039, peoples r china; chinese acad sci, inst semicond, natl lab superlattices & microstruct, beijing 100084, peoples r china |
| 收录类别 | CPCI-S |
| 会议录 | thin solid films, 395 (1-2)
 |
| 会议录出版者 | elsevier science sa ; po box 564, 1001 lausanne, switzerland |
| 学科主题 | 半导体材料 |
| 会议录出版地 | po box 564, 1001 lausanne, switzerland |
| 语种 | 英语 |
| ISSN号 | 0040-6090 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/14921]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Feng Y,Zhu M,Liu F,et al. Structural evaluation of polycrystalline silicon thin films by hot-wire-assisted PECVD[C]. 见:1st international conference on cat-cvd (hot wire cvd) process. kanazawa, japan. nov 14-17, 2000. |
入库方式： OAI收割
来源：半导体研究所
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