Current-induced migration of surface adatoms during GaN growth by molecular beam epitaxy
文献类型：会议论文
| 作者 | Zheng LX ; Xie MH ; Xu SJ ; Cheung SH ; Tong SY |
| 出版日期 | 2001 |
| 会议名称 | 11th international conference on molecular beam epitaxy (mbe-xi) |
| 会议日期 | sep 11-15, 2000 |
| 会议地点 | beijing, peoples r china |
| 关键词 | surface processes molecular beam epitaxy nitrides semiconducting gallium compounds GAN(0001) SURFACES RECONSTRUCTIONS |
| 页码 | 376-380 |
| 通讯作者 | xie mh univ hong kong dept phys pokfulam rd hong kong hong kong peoples r china. |
| 中文摘要 | the influence of electric fields on surface migration of gallium (ga) and nitrogen (n) adatoms is studied during gan growth by molecular beam epitaxy (mbe). when a direct current (dc) is used to heat the sample, long distance migration of ga adatoms and diffusion asymmetry of n adatoms at steps are observed. on the other hand, if an alternating current (ac) is used, no such preferential adatom migration is found. this effect is attributed to the effective positive charges of surface adatoms. representing an effect of electro-migration. the implications of such current-induced surface migration to gan epitaxy are subsequently investigated. it is seen to firstly change the distribution of ga adatoms on a growing surface, and thus make the growth to be ga-limited at one side of the sample but n-limited at the other side. this leads to different optical qualities of the film and different morphologies of the surface. (c) 2001 elsevier science b.v. all rights reserved. |
| 英文摘要 | the influence of electric fields on surface migration of gallium (ga) and nitrogen (n) adatoms is studied during gan growth by molecular beam epitaxy (mbe). when a direct current (dc) is used to heat the sample, long distance migration of ga adatoms and diffusion asymmetry of n adatoms at steps are observed. on the other hand, if an alternating current (ac) is used, no such preferential adatom migration is found. this effect is attributed to the effective positive charges of surface adatoms. representing an effect of electro-migration. the implications of such current-induced surface migration to gan epitaxy are subsequently investigated. it is seen to firstly change the distribution of ga adatoms on a growing surface, and thus make the growth to be ga-limited at one side of the sample but n-limited at the other side. this leads to different optical qualities of the film and different morphologies of the surface. (c) 2001 elsevier science b.v. all rights reserved.; 于2010-11-15批量导入; zhangdi于2010-11-15 17:02:17导入数据到semi-ir的ir; made available in dspace on 2010-11-15t09:02:17z (gmt). no. of bitstreams: 1 2913.pdf: 198451 bytes, checksum: e1f73d2118fde7f94abb873aaa8765fd (md5) previous issue date: 2001; china natl nat sci fdn.; inst semiconductor, cas.; inst phys, cas.; state key lab funct mat informat.; inst met, cas.; hong kong univ sci & technol.; univ hong kong, lab new mat.; chinese acad sci, lab new mat.; vg semicon.; riber.; univ hong kong, dept phys, hong kong, hong kong, peoples r china; chinese acad sci, inst semicond, state key lab integrated optoelect, beijing 100083, peoples r china |
| 收录类别 | CPCI-S |
| 会议主办者 | china natl nat sci fdn.; inst semiconductor, cas.; inst phys, cas.; state key lab funct mat informat.; inst met, cas.; hong kong univ sci & technol.; univ hong kong, lab new mat.; chinese acad sci, lab new mat.; vg semicon.; riber. |
| 会议录 | journal of crystal growth, 227
 |
| 会议录出版者 | elsevier science bv ; po box 211, 1000 ae amsterdam, netherlands |
| 学科主题 | 半导体材料 |
| 会议录出版地 | po box 211, 1000 ae amsterdam, netherlands |
| 语种 | 英语 |
| ISSN号 | 0022-0248 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/14935]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Zheng LX,Xie MH,Xu SJ,et al. Current-induced migration of surface adatoms during GaN growth by molecular beam epitaxy[C]. 见:11th international conference on molecular beam epitaxy (mbe-xi). beijing, peoples r china. sep 11-15, 2000. |
入库方式： OAI收割
来源：半导体研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。