Optical transitions and type-II band lineup of MBE-grown GaNAs/GaAs single-quantum-well structures
文献类型：会议论文
| 作者 | Jiang DS
|
| 出版日期 | 2001 |
| 会议名称 | 11th international conference on molecular beam epitaxy (mbe-xi) |
| 会议日期 | sep 11-15, 2000 |
| 会议地点 | beijing, peoples r china |
| 关键词 | molecular beam epitaxy quantum wells semiconducting IIIV materials LUMINESCENCE GAASN |
| 页码 | 501-505 |
| 通讯作者 | sun bq chinese acad sci inst semicond natl lab superlattices & microstruct pob 912 beijing 100083 peoples r china. |
| 中文摘要 | we have investigated transitions above and below band edge of ganas/gaas and inganas/gaas single quantum wells (qws) by photoluminescence (pl) as well as by absorption spectra via photovoltaic effects. the interband pl peak is observed to be dominant under high excitation intensity and at low temperature. the broad luminescence band below band edge due to the nitrogen-related potential fluctuations can be effectively suppressed by increasing indium incorporation into inganas. in contrast to inganas/gaas qws, the measured interband transition energy of ganas/gaas qws can be well fitted to the theoretical calculations if a type-ii band lineup is assumed. (c) 2001 elsevier science b.v. all rights reserved. |
| 英文摘要 | we have investigated transitions above and below band edge of ganas/gaas and inganas/gaas single quantum wells (qws) by photoluminescence (pl) as well as by absorption spectra via photovoltaic effects. the interband pl peak is observed to be dominant under high excitation intensity and at low temperature. the broad luminescence band below band edge due to the nitrogen-related potential fluctuations can be effectively suppressed by increasing indium incorporation into inganas. in contrast to inganas/gaas qws, the measured interband transition energy of ganas/gaas qws can be well fitted to the theoretical calculations if a type-ii band lineup is assumed. (c) 2001 elsevier science b.v. all rights reserved.; 于2010-11-15批量导入; zhangdi于2010-11-15 17:02:18导入数据到semi-ir的ir; made available in dspace on 2010-11-15t09:02:18z (gmt). no. of bitstreams: 1 2916.pdf: 115504 bytes, checksum: e9e079f8cca0a5b50beb4535b4a0b53d (md5) previous issue date: 2001; china natl nat sci fdn.; inst semiconductor, cas.; inst phys, cas.; state key lab funct mat informat.; inst met, cas.; hong kong univ sci & technol.; univ hong kong, lab new mat.; chinese acad sci, lab new mat.; vg semicon.; riber.; chinese acad sci, inst semicond, natl lab superlattices & microstruct, beijing 100083, peoples r china; chinese acad sci, inst semicond, state key lab integrated optoelect, beijing 100083, peoples r china |
| 收录类别 | CPCI-S |
| 会议主办者 | china natl nat sci fdn.; inst semiconductor, cas.; inst phys, cas.; state key lab funct mat informat.; inst met, cas.; hong kong univ sci & technol.; univ hong kong, lab new mat.; chinese acad sci, lab new mat.; vg semicon.; riber. |
| 会议录 | journal of crystal growth, 227
 |
| 会议录出版者 | elsevier science bv ; po box 211, 1000 ae amsterdam, netherlands |
| 学科主题 | 半导体物理 |
| 会议录出版地 | po box 211, 1000 ae amsterdam, netherlands |
| 语种 | 英语 |
| ISSN号 | 0022-0248 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/14941]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Jiang DS. Optical transitions and type-II band lineup of MBE-grown GaNAs/GaAs single-quantum-well structures[C]. 见:11th international conference on molecular beam epitaxy (mbe-xi). beijing, peoples r china. sep 11-15, 2000. |
入库方式： OAI收割
来源：半导体研究所
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