Modification of emission wavelength of self-assembled In(Ga)As/GaAs quantum dots covered by InxGa1-xAs(0 <= x <= 0.3) layer
文献类型：会议论文
| 作者 | Niu ZC ; Wang XD ; Miao ZH ; Feng SL |
| 出版日期 | 2001 |
| 会议名称 | 11th international conference on molecular beam epitaxy (mbe-xi) |
| 会议日期 | sep 11-15, 2000 |
| 会议地点 | beijing, peoples r china |
| 关键词 | crystal morphology quantum dots molecular beam epitaxy semiconducting gallium arsenide semiconducting indium gallium arsenide 1.35 MU-M GAAS-SURFACES PHOTOLUMINESCENCE ISLANDS |
| 页码 | 1062-1068 |
| 通讯作者 | niu zc chinese acad sci inst semicond natl lab superlattices & microstruct beijing 100083 peoples r china. |
| 中文摘要 | red shifts of emission wavelength of self-organized in(cla)as/gaas quantum dots (qds) covered by 3 nm thick inxga1-xas layer with three different in mole fractions (x = 0.1, 0.2 and 0.3, respectively) have been observed. transmission electron microscopy images demonstrate that the stress along growth direction in the inas dots was reduced due to introducing the inxga1-xas (x = 0.1, 0.2 and 0.3) covering layer instead of gaas layer. atomic force microscopy pictures show a smoother surface of inas islands covered by an in0.2ga0.8as layer. it is explained by the calculations that the redshifts of the photoluminescence (pl) spectra from the qds covered by the inxga1-xas (x greater than or equal to 0.1) layers were mainly due to the reducing of the strain other than the inas/gaas intermixing in the inas qds. the temperature dependent pl spectra further confirm that the ingaas covering layer can effectively suppress the temperature sensitivity of pl emissions. 1.3 mum emission wavelength with a very narrow linewidth of 19.2 mcv at room temperature has been obtained successfully from in,in0.5ga0.5as/gaas self-assembled qds covered by a 3-nm in0.2ga0.2as strain reducing layer. (c) 2001 elsevier science b.v. all rights reserved. |
| 英文摘要 | red shifts of emission wavelength of self-organized in(cla)as/gaas quantum dots (qds) covered by 3 nm thick inxga1-xas layer with three different in mole fractions (x = 0.1, 0.2 and 0.3, respectively) have been observed. transmission electron microscopy images demonstrate that the stress along growth direction in the inas dots was reduced due to introducing the inxga1-xas (x = 0.1, 0.2 and 0.3) covering layer instead of gaas layer. atomic force microscopy pictures show a smoother surface of inas islands covered by an in0.2ga0.8as layer. it is explained by the calculations that the redshifts of the photoluminescence (pl) spectra from the qds covered by the inxga1-xas (x greater than or equal to 0.1) layers were mainly due to the reducing of the strain other than the inas/gaas intermixing in the inas qds. the temperature dependent pl spectra further confirm that the ingaas covering layer can effectively suppress the temperature sensitivity of pl emissions. 1.3 mum emission wavelength with a very narrow linewidth of 19.2 mcv at room temperature has been obtained successfully from in,in0.5ga0.5as/gaas self-assembled qds covered by a 3-nm in0.2ga0.2as strain reducing layer. (c) 2001 elsevier science b.v. all rights reserved.; 于2010-11-15批量导入; zhangdi于2010-11-15 17:02:20导入数据到semi-ir的ir; made available in dspace on 2010-11-15t09:02:20z (gmt). no. of bitstreams: 1 2923.pdf: 175926 bytes, checksum: dc538bedf406933fb7e452d1adeef7c1 (md5) previous issue date: 2001; china natl nat sci fdn.; inst semiconductor, cas.; inst phys, cas.; state key lab funct mat informat.; inst met, cas.; hong kong univ sci & technol.; univ hong kong, lab new mat.; chinese acad sci, lab new mat.; vg semicon.; riber.; chinese acad sci, inst semicond, natl lab superlattices & microstruct, beijing 100083, peoples r china |
| 收录类别 | CPCI-S |
| 会议主办者 | china natl nat sci fdn.; inst semiconductor, cas.; inst phys, cas.; state key lab funct mat informat.; inst met, cas.; hong kong univ sci & technol.; univ hong kong, lab new mat.; chinese acad sci, lab new mat.; vg semicon.; riber. |
| 会议录 | journal of crystal growth, 227
 |
| 会议录出版者 | elsevier science bv ; po box 211, 1000 ae amsterdam, netherlands |
| 学科主题 | 半导体物理 |
| 会议录出版地 | po box 211, 1000 ae amsterdam, netherlands |
| 语种 | 英语 |
| ISSN号 | 0022-0248 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/14955]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Niu ZC,Wang XD,Miao ZH,et al. Modification of emission wavelength of self-assembled In(Ga)As/GaAs quantum dots covered by InxGa1-xAs(0 <= x <= 0.3) layer[C]. 见:11th international conference on molecular beam epitaxy (mbe-xi). beijing, peoples r china. sep 11-15, 2000. |
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来源：半导体研究所
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