Anisotropic strain in (100) ZnSe epilayers grown on lattice mismatched substrates
文献类型：会议论文
| 作者 | Yang Z ; Sou IK ; Chen YH |
| 出版日期 | 2000 |
| 会议名称 | 27th annual conference on the physics and chemistry of semiconductor interfaces (pcsi-27) |
| 会议日期 | jan 16-20, 2000 |
| 会议地点 | salt lake city, utah |
| 关键词 | REFLECTANCE DIFFERENCE SPECTROSCOPY ZNSE/GAAS INTERFACE STATES GAAS |
| 页码 | 2271-2273 |
| 通讯作者 | yang z hong kong univ sci & technol adv mat res inst clearwater bay kowloon hong kong peoples r china. |
| 中文摘要 | we show that part of the reflectance difference resonance near the e-0 energy of znse is due to the anisotropic in-plane strain in the znse thin films, as films grown on three distinctly different substrates, gaas, gap, and zns, all show the resonance at the same energy. such anisotropic strain induced resonance is predicted and also observed near the e-1/e-1+delta(1) energies in znse grown on gaas. the theory also predicts that there should be no resonance due to strain at, the e-0+delta(0) energy, which is consistent with experiments. the strain anisotropy is rather independent of the znse layer thickness, or whether the film is strain relaxed. for znse films with large lattice mismatch with substrates, the resonance at the e-1/e-1+delta(1) energies is absent, very likely due to the poor crystalline quality of the 20 nm or so surface layer. (c) 2000 american vacuum society. [s0734-211x(00)05604-3]. |
| 英文摘要 | we show that part of the reflectance difference resonance near the e-0 energy of znse is due to the anisotropic in-plane strain in the znse thin films, as films grown on three distinctly different substrates, gaas, gap, and zns, all show the resonance at the same energy. such anisotropic strain induced resonance is predicted and also observed near the e-1/e-1+delta(1) energies in znse grown on gaas. the theory also predicts that there should be no resonance due to strain at, the e-0+delta(0) energy, which is consistent with experiments. the strain anisotropy is rather independent of the znse layer thickness, or whether the film is strain relaxed. for znse films with large lattice mismatch with substrates, the resonance at the e-1/e-1+delta(1) energies is absent, very likely due to the poor crystalline quality of the 20 nm or so surface layer. (c) 2000 american vacuum society. [s0734-211x(00)05604-3].; 于2010-11-15批量导入; zhangdi于2010-11-15 17:02:21导入数据到semi-ir的ir; made available in dspace on 2010-11-15t09:02:21z (gmt). no. of bitstreams: 1 2943.pdf: 60618 bytes, checksum: c58dd5b6bebe980597358e35c9fab85b (md5) previous issue date: 2000; amer vacuum soc.; usa, off res.; usn, off res.; hong kong univ sci & technol, adv mat res inst, kowloon, hong kong, peoples r china; chinese acad sci, inst semicond, lab semicond mat sci, beijing 100083, peoples r china; hong kong univ sci & technol, dept phys, kowloon, hong kong, peoples r china |
| 收录类别 | CPCI-S |
| 会议主办者 | amer vacuum soc.; usa, off res.; usn, off res. |
| 会议录 | journal of vacuum science & technology b, 18 (4)
 |
| 会议录出版者 | amer inst physics ; 2 huntington quadrangle, ste 1no1, melville, ny 11747-4501 usa |
| 学科主题 | 半导体物理 |
| 会议录出版地 | 2 huntington quadrangle, ste 1no1, melville, ny 11747-4501 usa |
| 语种 | 英语 |
| ISSN号 | 1071-1023 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/14965]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Yang Z,Sou IK,Chen YH. Anisotropic strain in (100) ZnSe epilayers grown on lattice mismatched substrates[C]. 见:27th annual conference on the physics and chemistry of semiconductor interfaces (pcsi-27). salt lake city, utah. jan 16-20, 2000. |
入库方式： OAI收割
来源：半导体研究所
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