Optical properties of self-assembled ternary In(GA/Al)As quantum dots on (100) and (N 1 1)B InP substrates
文献类型：会议论文
| 作者 | Ye XL ; Xu B
|
| 出版日期 | 2000 |
| 会议名称 | 50th iumrs international conference on advanced materials |
| 会议日期 | jun 13-18, 1999 |
| 会议地点 | beijing, peoples r china |
| 关键词 | self-assembled quantum dots InP substrate high index In(Ga,Al)As/InAlAs/InP MBE MOLECULAR-BEAM-EPITAXY VAPOR-PHASE EPITAXY GAAS ISLANDS PHOTOLUMINESCENCE INP(001) GROWTH LASERS |
| 页码 | 164-169 |
| 通讯作者 | sun zz chinese acad sci inst semicond lab semicond mat sci pob 912 beijing 100083 peoples r china. |
| 中文摘要 | in this paper, we investigated the self-assembled quantum dots formed on (100) and (n11)b (n = 2, 3, 4, 5) inp substrates by molecular beam epitaxy (mbe). two kinds of ternary qds (in0.9ga0.1as and in0.9al0.1as qds) are grown on the above substrates; transmission electron microscopy (tem) and photoluminescence (pl) results confirm qds formation for all samples. the pl spectra reveal obvious differences in integral luminescence, peak position, full-width at half-maximum and peak shape between different oriented surfaces. highest pl integral intensity is observed from qds on (411)b surfaces, which shows a potential for improving the optical properties of qds by using high-index surface. (c) 2000 elsevier science b.v. all rights reserved. |
| 英文摘要 | in this paper, we investigated the self-assembled quantum dots formed on (100) and (n11)b (n = 2, 3, 4, 5) inp substrates by molecular beam epitaxy (mbe). two kinds of ternary qds (in0.9ga0.1as and in0.9al0.1as qds) are grown on the above substrates; transmission electron microscopy (tem) and photoluminescence (pl) results confirm qds formation for all samples. the pl spectra reveal obvious differences in integral luminescence, peak position, full-width at half-maximum and peak shape between different oriented surfaces. highest pl integral intensity is observed from qds on (411)b surfaces, which shows a potential for improving the optical properties of qds by using high-index surface. (c) 2000 elsevier science b.v. all rights reserved.; 于2010-11-15批量导入; zhangdi于2010-11-15 17:02:22导入数据到semi-ir的ir; made available in dspace on 2010-11-15t09:02:22z (gmt). no. of bitstreams: 1 2946.pdf: 197146 bytes, checksum: a1542f31d4052f64a35f9b991e1b976d (md5) previous issue date: 2000; lab semiconduct mat sci.; inst semiconduct.; chinese acad sci.; chinese acad sci, inst semicond, lab semicond mat sci, beijing 100083, peoples r china |
| 收录类别 | CPCI-S |
| 会议主办者 | lab semiconduct mat sci.; inst semiconduct.; chinese acad sci. |
| 会议录 | physica e, 8 (2)
 |
| 会议录出版者 | elsevier science bv ; po box 211, 1000 ae amsterdam, netherlands |
| 学科主题 | 半导体材料 |
| 会议录出版地 | po box 211, 1000 ae amsterdam, netherlands |
| 语种 | 英语 |
| ISSN号 | 1386-9477 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/14971]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Ye XL,Xu B. Optical properties of self-assembled ternary In(GA/Al)As quantum dots on (100) and (N 1 1)B InP substrates[C]. 见:50th iumrs international conference on advanced materials. beijing, peoples r china. jun 13-18, 1999. |
入库方式： OAI收割
来源：半导体研究所
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